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적층시간에 따른 PET기반위의 ZnO/Ag/ZnO박막의 특성 연구
김윤해(Yun-hae Kim),이진우(Jin-Woo Lee),무라카미 리이치(Ri-Ichi Murakami),하진철(Jin-cheol Ha),문경만(Kyung-man Moon) 한국해양환경·에너지학회 2012 한국해양환경공학회 학술대회논문집 Vol.2012 No.5
Transparent conductive oxides (TCOs) have been extensively used in optoelectronic device because of their high visible transmittance, low DC resistivity, high infra-red reflectance and absorbance in the microwave region. Zinc oxide is a direct wide-band 8ap II-VI n-type semiconductor material with the structure of wurtzite hexagonal structure. Zinc oxide has energy bandgap 3.37 eV and exciton binding energy of 60 meV at room temperature. We study using ZnO/Ag/ZnO films were deposited onto PET substrate at room temperature with the inclined opposite target type DC magnetron sputtering equipment. ZnO/Ag/ZnO multilayer films having high transmittance of 78.3% and low sheet resistance of 1.974 O/sq. are successfully fabricated and oan be reproduced by controlling the preparation process parameters properly.
ZnO/Ag Multilayer의 투과율과 전도성에 관한 연구
김윤해(Yun-hae Kim),김도완(Do-wan Kim),무라카미 리이치(Ri-Ichi Murakami),문경만(Kyung-man Moon),이성열(Sung-Yul Lee) 한국해양공학회 2011 韓國海洋工學會誌 Vol.25 No.1
This study has lowered the specific resistance by coating a thin film layer of Ag, playing the role of the electron donor on the ZnO that is used usefully for the transparent conductive oxides. Presently, this study has examined the transmittance and electric characteristics according to the thickness of the Ag thin film layer. Also, this study has observed the transmittance and electric characteristics according to the uppermost ZnO thin film layer of ZnO/Ag/ZnO symmetric film and has conducted the theoretical investigation. In order to observe the transmittance and electric characteristics according to the thickness of the Ag thin film layer and the uppermost ZnO thin film layer, this study conducted the film deposition at room temperature while making use of the DC magnetron sputtering system. In order to see the changes in the thickness of the Ag thin film layer, this study coated a thin film while increasing by 4㎚; and, in order to see the changes in the thickness of uppermost ZnO thin film layer, it performed the thin film coating by increasing by 5㎚. From the experimental result, the researchers observed that the best transmittance could be obtained when the thickness of the Ag thin film layer was 8㎚, but the resistance and mobility increased as the thickness got larger. On the other hand, when the thickness of the uppermost ZnO thin film layer was 20㎚, the experiment yielded the best transmittance with excellent electric characteristics. Also, when compared the ZnO/Ag asymmetric film with the ZnO/Ag/ZnO symmetric film, the ZnO/Ag asymmetric film showed better transmittance and electric characteristics.