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Histological, Physical Studies after Xenograft of Porcine Ear Cartilage
류용아,Meiying Jin,강낙헌 대한두개안면성형외과학회 2017 Archives of Craniofacial Surgery Vol.18 No.3
Background: Because of the relatively similar size of organs to human and the physiological and structural similarities, the use of porcine as xenograft donors is progressing very actively. In this study, we analyzed the characteristics of porcine ear cartilage and evaluated its suitability as graft material in reconstructive and cosmetic surgery. Methods: The auricular cartilage was harvested from two pigs, and subjected to histological examination by immunohistochemical staining. To determine the collagen content, samples were treated with collagenase and weight changes were measured. After sterilization by irradiation, the samples were grafted into rats and stained with Hematoxylin and Eosin and Masson Trichrome to observe inflammation and xenograft rejection. Results: In IHC staining, extracellular matrices were mainly stained with type II collagen (20.69%), keratin sulfate (10.20%), chondroitin sulfate (2.62%), and hyaluronic acid (0.84%). After collagenase treatment, the weight decreased by 68.3%, indicating that about 70% of the porcine ear cartilage was composed of collagen. Upon xenograft of the sterilized cartilages in rats, inflammatory cells were observed for up to 2 months. However, they gradually decreased, and inflammation and reject-response were rarely observed at 5 months. Conclusion: The porcine ear cartilage was covered with perichondrium and cellular constituents were found to be composed of chondrocytes and chondroblasts. In addition, the extracellular matrices were mainly composed of collagen. Upon xenograft of irradiated cartilage into rats, there was no specific inflammatory reaction around the transplanted cartilage. These findings suggest that porcine ear cartilage could be a useful alternative implant material for human cosmetic surgery.
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Delayed Orbital Hemorrhage around Alloplastic Implants after Blowout Fracture Reduction
류용아,박재범,경현우,송승한,강낙헌 대한두개안면성형외과학회 2015 Archives of Craniofacial Surgery Vol.16 No.1
Alloplastic implants have been used to repair orbital wall fractures in most cases. Orbitalhemorrhage is a rare complication of these implants and has been reported rarelyin Korea. The purpose of this article is to report a late complication case focusing ontheir etiology and management. A 20-year-old male patient underwent open reductionwith Medpor (porous polyethylene) insertion for bilateral orbital floor fractures. Theinitial symptom occurred with proptosis in the right side as well as vertical dystopia,which had started 4 days earlier, 8 months after surgery. Any trauma history after thesurgery was not present. We performed an exploration and removal of hematoma withMedpor titanium meshed alloplastic implant. A case of delayed orbital hematoma followingalloplastic implant insertion was identified. It occurred within the pseudocapsuleof the implant. One week after surgery, overall symptoms improved successfully, andno complications were reported during the 11-month follow-up period. Although rare,orbital hemorrhage is a potential complication of alloplastic orbital floor implants, whichmay present many years after surgery. As in the case presented, delayed hematomashould be included in the differential diagnosis of late proptosis or orbital dystopia.
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고전압 Field Stop IGBT의 최적화 설계에 관한 연구
안병섭,장란향,류용,강이구,Ahn, Byoung-Sup,Zhang, Lanxiang,Liu, Yong,Kang, Ey Goo 한국전기전자재료학회 2015 전기전자재료학회논문지 Vol.28 No.8
Power semiconductor device has a very long history among semiconductor, since the invention of low-pressure bipolar transistor 1947, and so far from small capacity to withstand voltage-current, high-speed and high-frequency characteristics have been developed with high function. In this study, the PWM IC Switch to the main parts used in IGBT (insulated gate bipolar transistor) for the low power loss and high drive capability of the simulator to Synopsys' T-CAD used by the 1,700 V NPT Planar IGBT, 1,700 V FS was a study of the Planar IGBT, the results confirmed that IGBT 1,700 V FS Planar is making about 11 percent less than the first designed NPT Planar IGBT.
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