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유한 요소 도구를 이용한 NPT IGBT의 열 특성 해석
류세환(Sehwan Ryu),이명수(Myungsoo Lee),원창섭(Changsub Won),안형근(Hyungkeun Ahn),한득영(Deukyoung Han) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.10
As the power density and switching frequency increase, thermal analysis of power electronics system becomes imperative. The analysis provides valuable information on the semiconductor rating, long-term reliability. In this paper, thermal distribution of the Non Punchthrough(NPT) Insulated Gate Bipolar Transistor has been studied. For analysis of thermal distribution, we obtained results by using finite element simulator, Ansys and thermal distributions form experiments.