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GaN Pyramids Prepared by Photo-Assisted Chemical Etching
강태원,데준푸,G. P. Panin 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.III
GaN pyramids were formed by photo-assisted chemical etching of GaN epilayers grown by molecular-beam epitaxy. The etching was conducted by using a solution of KOH and K$_2$S$_2$O$_8$ under ultraviolet illumination. The pyramids are hexagonal, submicron in size, and nonuniformly distributed on the substrate. Energy-dispersive X-ray analysis revealed a Ga-oxide layer covering the pyramids. This oxide can be removed by boiling in concentrated KOH. Cathodoluminescence measured from the pyramids was redshifted with respect to the GaN epilayer. The main reason for the redshift is the field induced by the electric polarization of the pyramid structure.