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Ultra Low Sheet Resistance on Poly Silicon Film by Excimer Laser Activation
다까시노구찌,Hyuck Lim,Do Young Kim,Hans S. Cho,Huaxiang Yin,권장연,Ji-Sim Jung,Jong-Man Kim,Kyung-Bae Park,Wenxu Xianyu,Xiaoxin Zhang 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.I
We found that the sheet resistance (Rs) value of phosphorus-doped poly-Si film activated by excimer laser annealing (ELA) has a strong correlation with the crystallinity in the film. At the optimum ELA condition of 10 shots and 450 mJ/cm2, we achieved a very low Rs value of 60 ohm/sq. in poly-Si films. With laser activation, we could get much lower Rs than with conventional rapid thermal annealing (RTA), for silicon layers of the same crystallinity level. The active dopant diffusion is observed from the energy which is speculated to correspond to the near-complete-melting energy regime during laser irradiation.
Ultra-Low Temperature Process by Ion Shower Doping Technique for Poly-Si TFT on Plastic
다까시노구찌,JongMan Kim,Do-Young Kim,Hyuck Lim,권장연,Ji-Sim Jung,홍완식 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.I
An ion doping process was performed by using a basic ion shower system. After ion doping and subsequent activation of the dopants in the Si film by excimer laser annealing (ELA), we studied the crystallinity of the Si surface using UV-reflectance spectroscopy and the sheet resistance by using 4-point probe measurements. To prevent excessive temperature increase on the plastic substrate during ion shower doping, the plasma shower was applied in a series of short pulses. As a result, dopant ions were efficiently incorporated and were activated into the a-Si film on plastic substrate after ELA. The sheet resistance decreased with increase of actual doping time, which corresponds to the incorporated dose. Also, we confirmed a distinct relationship between the crystallinity and the sheet resistance. This work shows that pulsed ion shower doping is a promising technique for ultra-low-temperature poly-Si TFTs on plastic substrates.
Study of HfO2 High-k Gate Oxide for Low-Temperature Poly-Si TFT
다까시노구찌,Jisim Jung,권장연,Seok Won Jeong,Seong Hoon Jeong,Wenxu XIANYU,노용한 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.I
We investigated HfO2/SiO2 thin film and found that it is a suitable candidate for an alternate gate insulator of SiO2 in thin film transistors (TFTs). Ultra thin SiO2 of 8.5 nm was deposited by inductively coupled plasma chemical vapor deposition (ICP CVD) below 200 C. Thin sputtered Hf metal films were oxidized and subsequently annealed under O2 and N2 ambient, respectively, to form polycrystalline HfO2 thin films simultaneously. We achieved a low leakage current level of 6.97 × 10.7 A/cm2 at .10 V and low EOT by HfO2/SiO2 double-layer structure.
HfSixOy-HfO2 Gate Insulator for Thin Film Transistors
S-W. Jeong,K. S. KIM,M. T. You,노용한,다까시노구찌,J. Jung,권장연 한국물리학회 2005 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.47 No.3
We propose a new technique to grow HfSixOy-HfO2 lm on Si substrate by using a 500C process, and demonstrate the feasibility of multi-layered high-k oxide flm (i.e., HfSixOy-HfO2) as alternative gate insulator for thin lm transistors (TFTs). Hf metal flms were directly deposited on Si wafers at substrate temperatures of 25 400 C by using a non-reactive rf-magnetron sputtering system. Oxidation at 500 C in dry O2 ambient and subsequent annealing at the same temperature in N2 ambient result in electrically stable multi-layered HfSixOy-HfO2 gate insulator for TFTs. We also investigate the eects of the substrate temperature on the physical and electrical properties of HfSixOy-HfO2 flms, and show that substrate temperature must be set at 25 C for the sputtering of Hf metallms to obtain optimum electrical characteristics (e.g.,high dielectricconstant, no hysteresis phenomenon, and low leakage current).
Effect of Thermal Annealing on Sputtered a-Si Film
Do Young Kim,Hans S. Cho,권장연,Ji Sim Jung,Kyung Bae Park,다까시노구찌 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.3
We studied amorphous silicon (a-Si) lm deposited by sputtering as a precursor material for laser crystallization. By using radio frequency (r.f.) sputtering, a-Si lm was deposited at room temperature. The a-Si lm was crystallized by using an ultraviolet (UV) pulsed excimer laser. It was found that the a-Si lm was delaminated, even at low laser energy densities below the energy density at which lateral grain growth could occur. However, when annealed for 1 hr at 500 C after deposition, the a-Si lm endured without delamination up to and beyond the laser energy density at which lateral grain growth could occur. The grain size of the poly-Si lm obtained by excimer laser annealing (ELA) after annealing the a-Si precursor lm at 500 C was as large as 300 nm. We conclude that the 500 C thermal annealing prevents the delamination during laser irradiation due to a reduction of intrinsic stress as a result of densication of the lm.