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마이크로머시닝을 위한 새로운 희생층인 다결정 - 산화막의 특성
홍순관,김철주 ( Soon Kwan Hong,Chul Ju Kim ) 한국센서학회 1996 센서학회지 Vol.5 No.1
Considering that polycrystalline silicon, a structural material of the micromachining, is affected by a sacrificial oxide layer, the poly-oxide obtained by the thermal oxidation of polycrystalline silicon is newly proposed and estimated as the sacrificial oxide layer. The grain size of the polycrystalline silicon grown on the poly-oxide is larger than that of polycrystalline silicon grown on the conventional sacrificial oxide layer. As a result of XRD, increase of (111) textures and formation of additional (220) textures are observed on the polycrystalline silicon deposited on the poly-oxide. Also, the polycrystalline silicon grown on the poly-oxide represents small and uniform stress.
朴善宇,洪淳寬,金鐵柱 서울市立大學校 1991 論文集 Vol.25 No.-
The backside gettering phenomena of OSFs which are generated at the Si-SiO₂interface during the oxidation is observed. After the backside boron diffusion at 1200℃ for 120min, the OSFs' density on the Si(100) front surface is reduced from 10?cm-²to about 20cm-²or below. In addition to, the rate of decrease of the OSFs' density is deduced experimentally as a function of the boron diffusion time and temperature.