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SnO<sub>2</sub> 나노와이어를 이용한 저온동작 고감도 고선택성 NO<sub>2</sub> 가스센서
김유종 ( Yoojong Kim ),박소영 ( So-young Bak ),이정석 ( Jeongseok Lee ),이세형 ( Se-hyeong Lee ),우경완 ( Kyoungwan Woo ),이상현 ( Sanghyun Lee ),이문석 ( Moonsuk Yi ) 한국센서학회 2021 센서학회지 Vol.30 No.3
In this paper, methods for improving the sensitivity of gas sensors to NO<sub>2</sub> gas are presented. A gas sensor was fabricated based on an SnO<sub>2</sub> nanowire network using the vapor-phase-growth method. In the gas sensor, the Au electrode was replaced with a fluorinedoped tin oxide (FTO) electrode, to achieve high sensitivity at low temperatures and concentrations. The gas sensor with the FTO electrode was more sensitive to NO<sub>2</sub> gas than the sensor with the Au electrode: notably, both sensors were based on typical SnO<sub>2</sub> nanowire network. When the Au electrode was replaced by the FTO electrode, the sensitivity improved, as the contact resistance decreased and the surface-to-volume ratio increased. The morphological features of the fabricated gas sensor were characterized in detail via field-emission scanning electron microscopy and X-ray diffraction analysis.
이정석(Jeongseok Lee),이세형(Se-Hyeong Lee),김유종(Yoojong Kim),우경완(Kyoung Wan Woo),박소영(So-Young Bak),이상현(Sang-Hyun Lee),이문석(Moonsuk Yi) 대한전자공학회 2018 대한전자공학회 학술대회 Vol.2018 No.6
Zinc and Tin composite nanostructures were fabricated as gas sensors on the interdigitated ITO (Indium Tin Oxide) electrodes. Zinc oxide (ZnO) and Tin dioxide (SnO₂) nanostructures were grown at 900℃ in the Vapor-Liquid-Solid(VLS) growth mechanism in a furnace. FE-SEM images in Figure 1 illustrated the composite nanostructures of ZnO-SnO₂, called “Nano-vine”. The normal metal catalysts such as Au and Cu were replaced with the Tin in the ITO electrodes. The Nano-vine was partially more sensitive in the detection sensitivity of noxious gases such as NO₂, CO and NH3 than that produced by nanostructures using Zn or Sn single material powders.
용액공정 ZnO/SnO₂ 박막 트랜지스터에 대한 몰비 및 열처리 조건의 영향
이세형(Se-Hyeong Lee),이정석(Jeongseok Lee),김유종(Yoojong Kim),우경완(Kyoung-Wan Woo),박소영(So-Young Bak),이상현(Sang-Hyun Lee),이문석(Moonsuk Yi) 대한전자공학회 2018 대한전자공학회 학술대회 Vol.2018 No.6
Conventional solution-processed ZTO thin film transistors(TFTs) had a thermal limitation that a high process temperature was required for deposition of a channel layer. To overcome these thermal limitations, we deposited a channel layer with a ZnO/SnO₂ structure and obtained optimal values by adjusting the molar ratio of ZnO and SnO₂ layers and annealing conditions. In conclusion, we fabricated ZnO/SnO₂ TFTs with similar performance to ZTO TFTs at a low process temperature. The optimized ZnO/SnO₂ TFTs exhibited the on/off ratio, saturation mobility, threshold voltage and subthreshold swing(S.S) of 1.26×105, 1.44cm2/V·s, +4.00V, 2.93V/dec, respectively.