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Zn(HPB)₂와 Zn(HPQ)₂를 이용한 White OLED의 제작 및 전기적 특성
김동은(Dong-Eun Kim),김병상(Byoung-Sang Kim),김경철(Gyong-Chol Kim),신훈규(Hoon-Kyu Shin),권영수(Young-Soo Kwon) 대한전기학회 2010 전기학회논문지 Vol.59 No.12
We have studied white OLED using two types of Zn-complexes as a emitting layer. We synthesized new emissive materials Zn(HPQ)₂ as a yellow emitting material and Zn(HPB)2 as a blue emitting material. Zn-complexes have a low molecular compound and thermal stability. The fundamental structures of the fabricated OLED was ITO / NPB (40㎚) / Zn(HPB)₂ (30㎚) / Zn(HPQ)₂ / LiF / Al. We varied the thickness of the Zn(HPQ)₂ layer 20, 30 40 ㎚. When the thickness of the Zn(HPQ)₂ layer was 20 ㎚, white emission was achieved. The maximum luminance was 12,000 ㏅/㎡ at a current density of 800 ㎃/㎠. The CIE coordinates of the white emission was (0.319. 0.338) at an applied voltage of 10 V.
Zn(HPB)q를 전자수송층으로 이용한 OLED의 전기․광학적 특성 연구
김동은(Dong-Eun Kim),박준우(Jun-Woo Park),김병상(Byoung-Sang Kim),이범종(Burm-Jong Lee),권영수(Young-Soo Kwon) 대한전기학회 2010 전기학회논문지 Vol.59 No.5
Recently, high luminance and high efficiency were realized in OLED with multilayer structure including emitting materials such as metal-chelate complexes. We synthesized a new luminescent material, namely, [2-(2-hydroxyphenyl)quinoline] (Zn(HPB)q) which has low molecular compound and emitted in yellowish green region. The ionization potential(IP) and electron affinity(EA) of Zn(HPB)q were measured by cyclic-voltammetry(CV). As a result, IP and EA of Zn(HPB)q were calculated 6.8 eV and 3.5 eV, respectively. We fabricated the devices and observed the possibility of Zn(HPB)q as electron transporting layer. We have obtained an improvement of luminance and decrease of turn-on voltage using Zn(HPB)q as electron transporting layer.
Properties of color purity as white OLED based on Zn(HPB)₂ as blue emitting layer
김동은(Dong-Eun Kim),김병상(Byoung-Sang Kim),김두석(Doo-Seok Kim),이범종(Burm-Jong Lee),권영수(Young-Soo Kwon) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.10
We synthesized emissive materials, namely Zn(HPB)₂. The fundamental structures of the OLEDs were ITO / NPB (40 ㎚) Zn(HPB)₂ (40 ㎚) / Alq₃:DCJTB (20, 30, or 40 ㎚) / LiF / Al. We varied the thickness of Alq₃:DCJTB from 20 ㎚ to 40㎚. We measured current density-voltage and luminance-voltage characteristics at room temperature. When the thickness of the Alq₃:DCJTB layer was 40 ㎚, white emission is achieved. The CIE coordinates are (0.32, 0.33) at an applied voltage of 14V.
PEDOT : PSS를 이용한 OLEDs의 발광 특성 향상에 관한 연구
김동은(Dong-Eun Kim),김병상(Byoung-Sang Kim),김두석(Doo-Seok Kim),권오관(Oh-Kwan Kwon),이범종(Burm-Jong Lee),권영수(Young-Soo Kwon) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.7
OLEDs based on organic thin films are similar to semiconductor base light-emitting diodes in that they were also considered to be one of the next generation flat-panel displays. They are attractive because of low-operating voltage, low power consumption, ease of fabrication, and low cost. In this study, we used poly(3,4 -ethylenedioxythiophene)/poly(4-styrenesulfonate) (PE DOT : PSS) as a hole injection layer. In this experiment spin coating method was used with various speed rate. The fundamental structure of the OLEDs was ITO/PEDOT : PSS/NPB /Alq₃/LiF/Al. As a result, we obtained the enhancement performance of OLEDs when the spin coating speed was 400rpm. We obtained a maximum luminance of 24334 cd/㎡ at a current density of 967 ㎃/㎠