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Single-configuration FPP method에 의한 실리콘 웨이퍼의 비저항 정밀측정
강전홍(Jeon-Hong Kang),유광민(Kwang-Min Yu),구경완(Kung-Wan Koo),한상옥(Sang-Ok Han) 대한전기학회 2011 전기학회논문지 Vol.60 No.7
Precision measurement of silicon wafer resistivity has been using single-configuration Four-Point Probe(FPP) method. This FPP method have to applying sample size, shape and thickness correction factor for a probe pin spacing to precision measurement of silicon wafer. The deference for resistivity measurement values applied correction factor and not applied correction factor was about 1.0 % deviation. The sample size, shape and thickness correction factor for a probe pin spacing have an effects on precision measurement for resistivity of silicon wafer.