http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Multiple Gate MOSFET의 ESD 특성 비교 연구
김대성(D. S. Kim),서성환(S. H. Seo),이성준(S. J. Lee),배현미(H. M. Bea),가대현(D. H. Ka),김용택(Y. T. Kim),박종태(J. T. Park) 대한전자공학회 2007 대한전자공학회 학술대회 Vol.2007 No.11
The ESD properties of multiple gate nMOSFET (MuGFET) have been studied using 3-dimensional device simulations. From the simulation results, the drain current increases and the leakage current decreases as the effective gate numbers increase. The breakdown voltage characteristics with different gate structures have been also analyzed with consideration of impact ionization. The lattice temperature distribution of multiple gate devices have been analyzed using human body model(HBM) in order to produce real-world ESD pulse. It is found that ESD properties of MuGFET are improved as the effective gate numbers increase due to the great gate control as well as the effective distribution of channel potential.