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김철균,최무용 성균관대학교 기초과학연구소 1998 論文集 Vol.49 No.-
In order to investigate the quantum-mechanical phenomena in mesoscopic systems, it is necessary to fabricate nano-scale structures. By using the electron-beam-direct-writing method and the lift-off method, we have successfully fabricated the quantum-dot gate structure with the gate width of 275 nm on a Si substrate. It is found that the optimal condition for writing the quantum-dot pattern on a 2,000Å-thick 4% - PMMA photo-resist is 90 seconds of develop time and 300 μC/㎠ of dose. It is also found that the optimal condition depends on geometry of nanostructure. It is necessary to find a new optimal condition for a pattern with a different geometry.