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Recent progress on metal halide perovskite field-effect transistors
Zhu Huihui,Liu Ao,Noh Yong-Young 한국정보디스플레이학회 2021 Journal of information display Vol.22 No.4
Metal halide perovskite semiconductors could potentially be used to create field-effect transistors (FETs) with high carrier mobilities. This review summarizes progress achieved recently in threedimensional (3D) lead-based and two-dimensional (2D) tin-based perovskite FETs, and identifies the evolution of electrical characteristics and stability, then discusses outstanding challenges and provides an outlook on the possibilities offered by this electronic material family for use in backplane drivers for active matrix displays.
Zhu, Huihui,Liu, Ao,Luque, Hector Lopez,Sun, Huabin,Ji, Dongseob,Noh, Yong-Young American Chemical Society 2019 ACS NANO Vol.13 No.4
<P>Although organic-inorganic halide perovskites continue to generate considerable interest due to great potentials for various optoelectronic devices, there are some critical obstacles to practical applications, including lead toxicity, relatively low field-effect mobility, and strong hysteresis during operation. This paper proposes a universal approach to significantly improve mobility and operational stability with reduced dual-sweep hysteresis for perovskite-based thin film transistors (TFTs) by coupling low-dimensional lead-free perovskite material (C<SUB>6</SUB>H<SUB>5</SUB>C<SUB>2</SUB>H<SUB>4</SUB>NH<SUB>3</SUB>)<SUB>2</SUB>SnI<SUB>4</SUB> (hereafter abbreviated as (PEA)<SUB>2</SUB>SnI<SUB>4</SUB>) with embedded conjugated polymer wrapped semiconducting carbon nanotubes (semi-CNTs). In (PEA)<SUB>2</SUB>SnI<SUB>4</SUB>/semi-CNT hybrid TFTs, semi-CNTs can provide highway-like transport paths, enabling smoother carrier transport with less trapping and scattering. We also demonstrate the performance of (PEA)<SUB>2</SUB>SnI<SUB>4</SUB>/semi-CNT hybrid phototransistors with ultrahigh photoresponsivity (<I>R</I>) of 6.3 × 10<SUP>4</SUP> A/W and detectivity (<I>D*</I>) of 1.12 × 10<SUP>17</SUP> Jones, which is about 2 or 3 orders of magnitude higher than that of the best devices available to date. The results indicate promising potentials for solution-processed perovskite/semi-CNT hybrid platforms, and the developed strategy can be applied for high-performance perovskite nanomaterial optoelectronics.</P> [FIG OMISSION]</BR>
KAT8/MOF-Mediated Anti-Cancer Mechanism of Gemcitabine in Human Bladder Cancer Cells
( Huihui Zhu ),( Yong Wang ),( Tao Wei ),( Xiaoming Zhao ),( Fuqiang Li ),( Yana Li ),( Fei Wang ),( Yong Cai ),( Jingji Jin ) 한국응용약물학회 2021 Biomolecules & Therapeutics(구 응용약물학회지) Vol.29 No.2
Histone acetylation is a well-characterized epigenetic modification controlled by histone acetyltransferases (HATs) and histone deacetylases (HDACs). Imbalanced histone acetylation has been observed in many primary cancers. Therefore, efforts have been made to find drugs or small molecules such as HDAC inhibitors that can revert acetylation levels to normal in cancer cells. We observed dose-dependent reduction in the endogenous and exogenous protein expression levels of KAT8 (also known as human MOF), a member of the MYST family of HATs, and its corresponding histone acetylation at H4K5, H4K8, and H4K16 in chemotherapy drug gemcitabine (GEM)-exposed T24 bladder cancer (BLCA) cells. Interestingly, the reduction in MOF and histone H4 acetylation was inversely proportional to GEM-induced γH2AX, an indicator of chemotherapy drug effectiveness. Furthermore, pGL4-MOF-Luc reporter activities were significantly inhibited by GEM, thereby suggesting that GEM utilizes an MOF-mediated anti-BLCA mechanism of action. In the CCK-8, wound healing assays and Transwell® experiments, the additive effects on cell proliferation and migration were observed in the presence of exogenous MOF and GEM. In addition, the promoted cell sensitivity to GEM by exogenous MOF in BLCA cells was confirmed using an Annexin V-FITC/PI assay. Taken together, our results provide the theoretical basis for elucidating the anti-BLCA mechanism of GEM.
Zhu, Huihui,Liu, Ao,Noh, Yong-Young IEEE 2019 IEEE electron device letters Vol.40 No.5
<P>Transparent polycrystalline p-channel copper bromide (CuBr) thin-film transistors (TFTs) are fabricated using a simple one-step spin coating at room temperature. Optimized CuBr TFTs operate in depletion mode with an on-voltage of 35 V and exhibit a hole mobility of 0.15 cm <TEX>$^{2}\,\,\text{V}^{-1}\,\,\text{s}^{-1}$</TEX>, high ON/OFF current ratio <TEX>${\sim }10^{4}$</TEX> and cycling bias sweep/air stabilities. The performance is superior to that of most solution-processed p-type oxide TFTs, highlighting CuBr as a promising p-type candidate for next-generation printable transparent electronics.</P>
Effect of Filter Parameters on a Supercontinuum-Based All-Optical Tunable Thresholder
Huatao Zhu,Rong Wang,Tao Pu,Tao Fang,Peng Xiang,Huihui Zhu 한국광학회 2016 Current Optics and Photonics Vol.20 No.4
In this paper, the effects of filter parameters on a supercontinuum-based all-optical thresholder areexperimentally investigated. By tuning the filter parameters, the power transfer function and powertransmission function are tailored. The experimental results show that a thresholder with short centerwavelength has a better power function, and the slope in the middle level of the thresholder increaseswith increasing bandwidth. Through tuning the filter parameters, the thresholder can achieve a steplikepower transfer function for optical thresholding, and a steplike power transmission function for opticalself-switching. This makes the supercontinuum-based thresholder more flexible, and allows customizationof performance to meet different demands in various applications.