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Kim, H.,Jang, J. H.,Song, W.,Jung, B.,Lee, J.,Hwang, D. H. 20151 60 5 2015 Journal of Materials Chemistry C Vol.3 No.46
<P>Two novel red Ir(III) complexes, (PQ)(2)Ir(Pppy) and (DMPQ)(2)Ir(Pppy), based on 2-phenylquinoline (PQ) and 2-(3,5-dimethylphenyl)quinoline (DMPQ) as cyclometalating ligands and 2-[ 4-(phenyl)phenyl]pyridine (Pppy) as a second cyclometalated ligand were synthesized for use in phosphorescent organic light-emitting diodes (OLEDs). The photoluminescence (PL) of (PQ)(2)Ir(Pppy) and (DMPQ)(2)Ir(Pppy) produces red emissions with maximum emission peaks at 602 and 615 nm, respectively. The highest occupied molecular orbital and lowest unoccupied molecular orbital energy levels of (PQ)(2)Ir(Pppy) and (DMPQ)(2)Ir(Pppy) were -5.15/-2.97 and -5.13/-2.96 eV, respectively. Red phosphorescent organic light-emitting devices were fabricated based on (PQ)(2)Ir(Pppy) or (DMPQ)(2)Ir(Pppy) as red dopants: ITO (50 nm)/PEDOT:PSS (40 nm)/NPB (20 nm)/TCTA (10 nm)/TCTA:TPBi:red dopant (25 nm, 10%)/TPBI (35 nm)/LiF (1 nm)/Al (200 nm). (PQ)(2)Ir(Pppy) and (DMPQ)(2)Ir(Pppy) exhibited a very broad full width at half maximum (FWHM) at around 100 nm in electroluminescent (EL) devices, which makes it suitable for fabricating white OLEDs with high colour quality. Among the these devices, the device fabricated by (DMPQ)(2)Ir(Pppy) of higher PL quantum yields (Phi(pl)) than that of (PQ)(2)Ir(Pppy) showed an EL emission peak at 617 nm and a maximum external quantum efficiency (EQE(max)) of 19.2%. Moreover, a white OLED prepared from (DMPQ)(2)Ir(Pppy) with FIrpic and Ir(ppy)(3) gave the best performance, with an EQE(max) of 21.9%, maximum power efficiency of 24.8 lm W-1, luminous efficiency of 40.2 cd A(-1), and Commission Internationale de L'Eclairage coordinates of (0.39,0.41) at a luminance of 1000 cd m(-2).</P>
Choi, Y. J.,Kang, K. M.,Lee, H. S.,Park, H. H. 20151 60 5 2015 Journal of materials chemistry. C, Materials for o Vol.3 No.32
<P>Chlorine doping in a ZnO matrix to a concentration of 0.65 +/- 0.05 at% was accomplished via atomic layer deposition using a home-made chlorine source at a low deposition temperature of 140 degrees C. Structural and morphological properties were investigated using X-ray diffraction, field emission scanning electron microscopy, and grazing incidence wide-angle X-ray diffraction. The introduction of chlorine into the ZnO matrix resulted in significant grain growth reorientation due to chlorine doping in the oxygen sites of ZnO. Cl- ions preferentially occupied the substitutional O- ion site and O vacancies, and the preferential growth in the {100} planes changed to growth in the {002} planes along the longitudinal direction of the hexagonal wurtzite structure as a function of the Cl doping levels. This important phenomenon was explained by a passivation effect, resulting from the chlorine doping mechanism; this was elucidated using transmission electron microscopy. The optical transmittances of the undoped ZnO and ZnO:Cl films were approximately the same (88%), but the optical band gap was increased by the introduction of a Cl dopant in ZnO due to the Burstein-Moss effect. The lowest resistivity of ZnO:Cl was 1.215 x 10(-2) Omega cm, and the corresponding carrier concentration and mobility were 5.715 x 10(19) cm(-3) and 31.81 cm(2) V-1 s(-1), respectively. Finally, the calculated doping efficiency of chlorine in ZnO was 10.8%, which was higher than that of aluminum-doped ZnO, even though the deposition temperature was very low when applied to plastic substrates due to the non-laminated growth of ZnO:Cl films.</P>