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Growth Mechanisms for Atypical Forms of Silicon Nanowires
Minoru Aoyagi,Takefumi Hiraguri,Takahiro Ueno,Makoto Okuda,Yuuta Hishinuma 대한금속·재료학회 2013 METALS AND MATERIALS International Vol.19 No.1
An investigation was carried out into the growth mechanisms for atypical forms of silicon nanowires (Si-NWs) synthesized using a vapor-liquid-solid growth process assisted by hydrogen radicals. Sn or Au nanoparticles, which act as catalysts during Si-NW growth, were produced by hydrogen radical treatment of Sn or Au thin films covering a silicon substrate. The Si-NWs were synthesized from silane gas excited by hydrogen radicals in the presence of these nanoparticle catalysts. In addition to normal Si-NW structures, atypical forms such as tapered, branched, bent, corrugated and block types, were synthesized. The growth of tapered, branched and bent-type Si-NWs was caused by contraction of the catalytic nanoparticles, adhesion of nanoparticles to the side wall of growing Si-NWs, and non-uniform supersaturation of the nanoparticles with Si, respectively. Growth of corrugated- and block-type Si-NWs was induced by an excess supply of Si atoms to the growing Si-NWs.