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The External Benefits of Research and Development Investment in Waste-to-Energy Technology in Korea
Lim, Seul-Ye,Kim, Hyo-Jin,Yoo, Seung-Hoon Asian Society for Innovation and Policy 2016 Asian Journal of Innovation and Policy Vol.5 No.2
The Korean government considers expanding the WtE share of total energy from 1% to 5% by 2020 through research and development (R&D) in waste-to-energy (WtE) technologies. This study attempts to measure the external benefits of investing in R&D in these technologies. To this end, a contingent valuation (CV) is employed. More specifically, a 2016 national survey of randomly selected 1,000 households was carried out across the nation to gauge the willingness to pay (WTP) for the investment. One-and-one-half-bounded dichotomous choice question was used in the CV survey, and the spike model was applied to dealing with zero WTP responses. The mean yearly WTP is estimated to be KRW 4,175 (USD 3.57) per household, which is statistically significant at the 1% level. Expanding the value to the entire nation translates into an investment of about KRW 79.1 billion (USD 67.6 million), which can be interpreted as the annual external benefit of the R&D investment in WtE technology.
Lim, Seul-Ye,Kim, Hyo-Jin,Yoo, Seung-Hoon Elsevier Science Ltd 2016 Energy Policy Vol.97 No.-
<P><B>Abstract</B></P> <P>The demand for residential heat (RH) through a district heating system (DHS) has been and will be expanded in Korea due to its better performance in energy efficiency and the abatement of greenhouse gas emissions than decentralized boilers. The purposes of this paper are two-fold. The first is to obtain the demand function for DHS-based RH in Korea and investigate the price and income elasticities of the demand employing the quarterly data covering the period 1988–2013. The short-run price and income elasticities are estimated as −0.700 and 0.918, respectively. Moreover, the long-run elasticities are −1.253 and 1.642, respectively. The second purpose is to measure the consumption benefits of DHS-based-RH employing the economic theory that they are the sum of the actual payment and consumer surplus for the consumption. Considering that the average price and estimated consumer surplus of the DHS-based RH use in 2013 are computed to be KRW 87,870 (USD 84.1) and KRW 62,764 (USD 60.1) per Gcal, the consumption benefits of the DHS-based RH are calculated to be KRW 150,634 (USD 144.2) per Gcal. This information can be beneficially utilized to conduct an economic feasibility study for a new DHS project related to RH supply.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Demand for residential heat (RH) from district heating system (DHS) is expanding. </LI> <LI> We estimate the demand function for and consumption benefits of DHS-based RH. </LI> <LI> Short-run price and income elasticities are −0.700 and 0.918, respectively. </LI> <LI> Long-run price and income elasticities are −1.253 and 1.642, respectively. </LI> <LI> Consumption benefits of DHS-based RH are KRW 150,634 (USD 144.2) per Gcal. </LI> </UL> </P>
The External Benefits of Research and Development Investment in Waste-to-Energy Technology in Korea
Seul-Ye Lim,Hyo-Jin Kim,유승훈 아시아기술혁신학회 2016 Asian Journal of Innovation and Policy Vol.5 No.2
The Korean government considers expanding the WtE share of total energy from 1% to 5% by 2020 through research and development (R&D) in waste-to-energy (WtE) technologies. This study attempts to measure the external benefits of investing in R&D in these technologies. To this end, a contingent valuation (CV) is employed. More specifically, a 2016 national survey of randomly selected 1,000 households was carried out across the nation to gauge the willingness to pay (WTP) for the investment. One-and-one-half-bounded dichotomous choice question was used in the CV survey, and the spike model was applied to dealing with zero WTP responses. The mean yearly WTP is estimated to be KRW 4,175 (USD 3.57) per household, which is statistically significant at the 1% level. Expanding the value to the entire nation translates into an investment of about KRW 79.1 billion (USD 67.6 million), which can be interpreted as the annual external benefit of the R&D investment in WtE technology.
Lim, Ye Seul,Jeong, Jeunghyun,Kim, Jin Young,Ko, Min Jae,Kim, Honggon,Kim, BongSoo,Jeong, Unyong,Lee, Doh-Kwon American Chemical Society 2013 JOURNAL OF PHYSICAL CHEMISTRY C - Vol.117 No.23
<P>A low-cost, nonvacuum fabrication route for CuInSe<SUB>2</SUB> and CuInS<SUB>2</SUB> thin films is presented. To produce these films, binder-free colloidal precursors were prepared using Cu–In intermetallic nanoparticles that were synthesized via a chemical reduction method. The Cu–In alloy precursor films were transformed to CuInSe<SUB>2</SUB> and CuInS<SUB>2</SUB> by reactive annealing in chalcogen-containing atmospheres at atmospheric pressure. The as-synthesized nanoparticles and the annealed films were characterized by X-ray diffraction, transmission electron microscopy, scanning electron microscopy, energy dispersive X-ray spectrometry, electron probe X-ray microanalysis, Raman spectroscopy, and Auger electron spectroscopy depth profile measurements to elucidate the phase evolution pathway and the densification mechanism of the Cu–In–Se–S system. Solar cell devices made with CuInSe<SUB>2</SUB> and CuInS<SUB>2</SUB> absorbing layers exhibited power conversion efficiencies of 3.92% and 2.28%, respectively. A comparison of the devices suggested that the microstructure of the absorbing layer had a greater influence on the overall photovoltaic performance than the band gap energy. A diode analysis on the solar cell devices revealed that the high saturation current density and diode ideality factor caused lower open-circuit voltages than would be expected from the band gap energies. However, the diode analysis combined with the microstructural and compositional analysis offered guidance about how to improve the photovoltaic performance of these devices.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/jpccck/2013/jpccck.2013.117.issue-23/jp401637b/production/images/medium/jp-2013-01637b_0013.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/jp401637b'>ACS Electronic Supporting Info</A></P>
Lim Ye-Seul,Choi Ju-Hee,Ahn Kyu-Jin,Kim Min-Ku,Bae Sung-Ho 한국미생물학회 2021 The journal of microbiology Vol.59 No.4
Eukaryotic genomes contain many duplicated genes closely located with each other, such as the hexose transporter (HXT) genes in Saccharomyces cerevisiae. They can potentially recombine via single-strand annealing (SSA) pathway. SSA between highly divergent sequences generates heteroduplex DNA intermediates with many mismatches, which can be corrected by mismatch repair (MMR), resulting in recombinant sequences with a single junction point. In this report, we demonstrate that SSA between HXT1 and HXT4 genes in MMR-deficient yeast cells produces recombinant genes with multiple-junctions resulting from alternating HXT1 and HXT4 tracts. The mutations in MMR genes had differential effects on SSA frequencies; msh6Δ mutation significantly stimulated SSA events, whereas msh2Δ and msh3Δ slightly suppressed it. We set up an assay that can identify a pair of recombinant genes derived from a single heteroduplex DNA. As a result, the recombinant genes with multiple-junctions were found to accompany genes with single-junctions. Based on the results presented here, a model was proposed to generate multiple-junctions in SSA pathway involving an alternative short-patch repair system.
Lim, Ye Seul,Kwon, Hyung-Soon,Jeong, Jeunghyun,Kim, Jin Young,Kim, Honggon,Ko, Min Jae,Jeong, Unyong,Lee, Doh-Kwon American Chemical Society 2014 ACS APPLIED MATERIALS & INTERFACES Vol.6 No.1
<P>We demonstrate here that an improvement in the green density leads to a great enhancement in the photovoltaic performance of CuInSe<SUB>2</SUB> (CISe) solar cells fabricated with Cu–In nanoparticle precursor films via colloidal solution deposition. Cold-isostatic pressing (CIP) increases the precursor film density by ca. 20%, which results in an appreciable improvement in the microstructural features of the sintered CISe film in terms of a lower porosity, a more uniform surface morphology, and a thinner MoSe<SUB>2</SUB> layer. The low-band-gap (1.0 eV) CISe solar cells with the CIP-treated films exhibit greatly enhanced open-circuit voltage (<I>V</I><SUB>OC</SUB>, typically from 0.265 to 0.413 V) and fill factor (FF, typically from 0.34 to 0.55), compared to the control devices. As a consequence, an almost 3-fold increase in the average efficiency, from 3.0 to 8.2% (with the highest value of 9.02%), is realized. Diode analysis reveals that the enhanced <I>V</I><SUB>OC</SUB> and FF are essentially attributed to the reduced reverse saturation current density and diode ideality factor. This is associated with suppressed recombination, likely due to the reduction in recombination sites at grain/air surfaces, intergranular interfaces, and defective CISe/CdS junctions. From the temperature dependences of <I>V</I><SUB>OC</SUB>, it is revealed that CIP-treated devices suffer less from interface recombination.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/aamick/2014/aamick.2014.6.issue-1/am4040976/production/images/medium/am-2013-040976_0010.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/am4040976'>ACS Electronic Supporting Info</A></P>