http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Dynamic Paralleling Behaviors of High Power Trench and Fieldstop IGBTs
Wu, Yu,Sun, Yaojie,Lin, Yandan The Korean Institute of Power Electronics 2014 JOURNAL OF POWER ELECTRONICS Vol.14 No.4
This paper demonstrates the dynamic behaviors of paralleled high power IGBTs using trench and fieldstop technologies. Four IGBTs are paralleled and standard deviation is adopted to represent the imbalance. Experiments are conducted under three different operation conditions and at different temperatures ranging from $-25^{\circ}C$ to $125^{\circ}C$. The experimental results show that operation at very low and very high temperatures usually aggravates the switching behaviors. There is a trade-off between the balance and the losses at low temperatures. These results can help in the design of heat sinks in paralleling applications confronting very low temperatures.
Dynamic Paralleling Behaviors of High Power Trench and Fieldstop IGBTs
Yu Wu,Yaojie Sun,Yandan Lin 전력전자학회 2014 JOURNAL OF POWER ELECTRONICS Vol.14 No.4
This paper demonstrates the dynamic behaviors of paralleled high power IGBTs using trench and fieldstop technologies. Four IGBTs are paralleled and standard deviation is adopted to represent the imbalance. Experiments are conducted under three different operation conditions and at different temperatures ranging from -25°C to 125°C. The experimental results show that operation at very low and very high temperatures usually aggravates the switching behaviors. There is a trade-off between the balance and the losses at low temperatures. These results can help in the design of heat sinks in paralleling applications confronting very low temperatures.