http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Local electronic structure of Mn dopants in ZnO probed by resonant inelastic x-ray scattering
Chang, G S,Kurmaev, E Z,Jung, S W,Kim, H-J,Yi, G-C,Lee, S-I,Yablonskikh, M V,Pedersen, T M,Moewes, A,Finkelstein, L D IOP Pub 2007 Journal of physics, an Institute of Physics journa Vol.19 No.27
<P>The electronic structure of Mn dopants in ZnO epitaxial thin films synthesized at different temperatures has been investigated using resonant inelastic x-ray scattering. The resulting Mn L<SUB>2,3</SUB> x-ray emission spectra of Zn<SUB>0.8</SUB>Mn<SUB>0.2</SUB>O (resonantly excited at L<SUB>2</SUB> and L<SUB>3</SUB> absorption edges) reveal different spectral features depending on the growth temperature of the films. The relative integral intensity ratio of Mn L<SUB>2</SUB> to Mn L<SUB>3</SUB> emission lines is greatly suppressed in the case of nonmagnetic Zn<SUB>0.8</SUB>Mn<SUB>0.2</SUB>O grown at 700 °C due to L<SUB>2</SUB>L<SUB>3</SUB>M<SUB>4,5</SUB> Coster–Kronig transitions. The ferromagnetic sample grown at 600 °C exhibits a normal oxide structure. The results suggest that a high growth temperature causes direct Mn–Mn bonds from the segregation of Mn atoms in ZnO. Therefore the disappearance of ferromagnetism in Mn-doped ZnO can be attributed to antiferromagnetic Mn–Mn exchange interactions due to the inhomogeneous local environment around the Mn impurities.</P>