http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Optimized Thermoelectric Properties of AgSbTe2 through Adjustment of Fabrication Parameters
Jian Zhang,Xiaoying Qin,Di Li,송천준,Yongfei Liu,Hongxing Xin,Tianhua Zou,Yuanyue Li 대한금속·재료학회 2015 ELECTRONIC MATERIALS LETTERS Vol.11 No.1
AgSbTe2 bulk sample is obtained by hot-pressing under different fabricationparameters, and their thermoelectric properties are investigated in thetemperature range of 300 - 550 K. The highest ZT = 0.86 is achieved at475 K for the sample hot-pressed at 423 K and 500MPa due to the lowerthermal conductivity and higher power factor. The results indicate that theoptimized thermoelectric properties can be obtained for AgSbTe2 compoundat the sintering temperature of 423 K under the pressure of 500 MPa.
Silicon Interfacial Passivation Layer Chemistry for High-<i>k</i>/InP Interfaces
Dong, Hong,Cabrera, Wilfredo,Qin, Xiaoye,Brennan, Barry,Zhernokletov, Dmitry,Hinkle, Christopher L.,Kim, Jiyoung,Chabal, Yves J.,Wallace, Robert M. American Chemical Society 2014 ACS APPLIED MATERIALS & INTERFACES Vol.6 No.10
<P>The interfacial chemistry of thin (1 nm) silicon (Si) interfacial passivation layers (IPLs) deposited on acid-etched and native oxide InP(100) samples prior to atomic layer deposition (ALD) is investigated. The phosphorus oxides are scavenged completely from the acid-etched samples but not completely from the native oxide samples. Aluminum silicate and hafnium silicate are possibly generated upon ALD and following annealing. The thermal stability of a high-<I>k</I>/Si/InP (acid-etched) stack are also studied by in situ annealing to 400 and 500 °C under ultrahigh vacuum, and the aluminum oxide/Si/InP stack is the most thermally stable. An indium out-diffusion to the sample surface is observed through the Si IPL and the high-<I>k</I> dielectric, which may form volatile species and evaporate from the sample surface.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/aamick/2014/aamick.2014.6.issue-10/am500752u/production/images/medium/am-2014-00752u_0010.gif'></P>
Realistic Metal–Graphene Contact Structures
Gong, Cheng,McDonnell, Stephen,Qin, Xiaoye,Azcatl, Angelica,Dong, Hong,Chabal, Yves J.,Cho, Kyeongjae,Wallace, Robert M. American Chemical Society 2014 ACS NANO Vol.8 No.1
<P>The contact resistance of metal–graphene junctions has been actively explored and exhibited inconsistencies in reported values. The interpretation of these electrical data has been based exclusively on a <I>side</I>-contact model, that is, metal slabs sitting on a pristine graphene sheet. Using <I>in</I> <I>situ</I> X-ray photoelectron spectroscopy to study the wetting of metals on as-synthesized graphene on copper foil, we show that side-contact is sometimes a misleading picture. For instance, metals like Pd and Ti readily react with graphitic carbons, resulting in Pd- and Ti-carbides. Carbide formation is associated with C–C bond breaking in graphene, leading to an <I>end</I>-contact geometry between the metals and the periphery of the remaining graphene patches. This work validates the <I>spontaneous</I> formation of the metal–graphene end-contact during the metal deposition process as a result of the metal–graphene reaction instead of a simple carbon diffusion process.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/ancac3/2014/ancac3.2014.8.issue-1/nn405249n/production/images/medium/nn-2013-05249n_0005.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nn405249n'>ACS Electronic Supporting Info</A></P>
Chengyu Jin,Lingyun Wang,Xiaoying Liu,Yuanchao Lu,Ningxiang Yu,Xiaohua Nie,Qin Ye,Xianghe Meng 한국식품과학회 2023 Food Science and Biotechnology Vol.32 No.14
Gardenia jasminoides Ellis, a representative for “homology of medicine and food”, can be used to produce pigment and edible oil. Here, aqueous enzymatic extraction (AEE) combined with puffing pre-treatment was explored to prepare oil from gardenia seeds. Both wet-heating puffing (WP) at 90 °C and dry-heating puffing (DP) at 1.0 MPa facilitated the release of free oil by AEE, resulting in the highest free oil yields (FOY) of 21.8% and 23.2% within 3 h, much higher than that of un-puffed group. Additionally, active crocin and geniposide were also completely released. The FOY obtained was much higher than mechanical pressing method (10.44%), and close to solvent extraction (25.45%). Microstructure analysis indicated that gardenia seeds expanded by dry-heating puffing (1.0 MPa) had a larger, rougher surface and porous structure than other groups. Overall, AEE coupled with puffing pre-treatment developed is an eco-friendly extraction technology with high efficiency that can be employed to oil preparation.
Lucero, Antonio T.,Byun, Young-Chul,Qin, Xiaoye,Cheng, Lanxia,Kim, Hyoungsub,Wallace, Robert M.,Kim, Jiyoung Institute of Pure and Applied Physics 2016 Japanese Journal of Applied Physics Vol. No.
<P>Atomic layer deposition is used to convert an (NH4)(2)S cleaned p-In0.53Ga0.47As with diethylzinc (DEZ) and water, resulting in the formation of a ZnO/ZnS interfacial passivation layer (IPL). The process is studied using in-situ X-ray photoelectron spectroscopy. DEZ reacts with sulfur and oxygen present on the surface, chemically reducing arsenic 3+ and gallium 3+ to lower oxidation states. The sulfur concentration remains constant during the deposition process while the oxygen concentration on the surface remains small, confirming that the IPL is composed of both ZnO and ZnS. Measurements of metal-oxide-semiconductor capacitors with HfO2 for the dielectric show that the ZnO/ZnS IPL can nearly eliminate frequency dispersion (<1% per frequency decade) in accumulation and results in small hysteresis (<60 mV) with a Dit in the 10(11) eV(-1) cm(-2) range in the midgap. Frequency dispersion is observed in the depletion region and is attributed to minority carrier generation from the ZnO present in the IPL. (C) 2016 The Japan Society of Applied Physics</P>