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        Effect of phonons on valley depolarization in monolayer WSe2

        Vijila Chellappan,Ai Lin Christina Pang,Soumya Sarkar,Zi En Ooi,Kuan Eng Johnson Goh 대한금속·재료학회 2018 ELECTRONIC MATERIALS LETTERS Vol.14 No.6

        In this paper, temperature dependence of the excitonic bands in a mechanically exfoliated tungsten diselenide (WSe 2 ) monolayeris studied using photoluminescence and circular dichroic photoluminescence (PL) in the temperature range between8 and 300 K. The peak energies associated with the neutral exciton (A), charged exciton (trion) and localized excitons areextracted from the PL spectra revealing a trion binding energy of around 30 meV. The circular dichroic PL measured at 8 Kshows about 45% valley polarisation that sharply reduces with increasing temperature to 5% at 300 K with photoexcitationenergy of 1.96 eV. A detailed analysis of the emission line-width suggests that the rapid decrease of valley polarisation withthe increase of temperature is caused by the strong exciton–phonon interactions which effi ciently scatter the excitons intodiff erent excitonic states that are easily accessible due to the supply of excess photoexcitation energy. The emission linewidthbroadening with the increase of temperature indicate residual exciton dephasing lifetime < 100 fs, that correlates withthe observed rapid valley depolarisation.

      • Enhanced Performance Using an SU-8 Dielectric Interlayer in a Bulk Heterojunction Organic Solar Cell

        Pang, Christina,Chellappan, Vijila,Yim, Jong Hyuk,Tan, Mein Jin,Goh, Glen Tai Wei,Lee, Soonil,Zhang, Jie,de Mello, John American Chemical Society 2015 ACS APPLIED MATERIALS & INTERFACES Vol.7 No.9

        <P>The effect of inserting an SU-8 dielectric interlayer into inverted bulk heterojunction (BHJ) organic solar cells (OSCs) was studied. Insertion of an ultrathin layer of SU-8 between the zinc oxide (ZnO) electron transport layer and the photoactive layer resulted in a smoother interface and a 14% enhancement in power conversion efficiency. The properties of devices with and without an SU-8 interlayer were investigated using transient photovoltage (TPV) and double injection (DoI) techniques, and it was found that devices with SU-8 show longer carrier lifetimes and greater mobility–lifetime (μ–τ) products than those without. Devices with SU-8 were also found to have improved stability. The results indicate that the insertion of an SU-8 interlayer reduces the recombination rate for photogenerated carriers without affecting the charge transport properties, improving overall performance and stability.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/aamick/2015/aamick.2015.7.issue-9/am508177p/production/images/medium/am-2014-08177p_0008.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/am508177p'>ACS Electronic Supporting Info</A></P>

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