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Xu, Xin,Potié,, Alexis,Songmuang, Rudeesun,Lee, Jae Woo,Bercu, Bogdan,Baron, Thierry,Salem, Bassem,Montè,s, Laurent IOP Pub 2011 Nanotechnology Vol.22 No.10
<P>We present an improved atomic force microscopy (AFM) method to study the piezoelectric properties of nanostructures. An AFM tip is used to deform a free-standing piezoelectric nanowire. The deflection of the nanowire induces an electric potential via the piezoelectric effect, which is measured by the AFM coating tip. During the manipulation, the applied force, the forcing location and the nanowire’s deflection are precisely known and under strict control. We show the measurements carried out on intrinsic GaN and n-doped GaN–AlN–GaN nanowires by using our method. The measured electric potential, as high as 200 mV for n-doped GaN–AlN–GaN nanowire and 150 mV for intrinsic GaN nanowire, have been obtained, these values are higher than theoretical calculations. Our investigation method is exceptionally useful to thoroughly examine and completely understand the piezoelectric phenomena of nanostructures. Our experimental observations intuitively reveal the great potential of piezoelectric nanostructures for converting mechanical energy into electricity. The piezoelectric properties of nanostructures, which are demonstrated in detail in this paper, represent a promising approach to fabricating cost-effective nano-generators and highly sensitive self-powered NEMS sensors. </P>
Comparative Study on Dry Etching of α- and β-SiC Nano-Pillars
Choi, J.H.,Latu-Romain, Laurence,Bano, Edwige,Henry, Anne,Lee, Won Jae,Chevolleau, Thierry,Baron, Thierry Trans Tech Publications, Ltd. 2013 Materials science forum Vol.740 No.-
<P>A comprehensive study on different polytypes (α-SiC and β-SiC) and crystal orientations ((0001) and (11-20) of 6H-SiC) has been investigated in order to elaborate Silicon carbide (SiC) nanopillar using inductively coupled plasma etching method. The SiC nanopillars with the cross section of rhombus, pentagon, and hexagonal have been obtained on β-SiC (001), misoriented α-SiC (11-20), and α-SiC (0001) on-axis substrates, respectively. It was found that crystal orientations and polytypes play key roles for the morphology of SiC nanopillars, which reflects the so-called Wulff's rule.</P>