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2차원 MoS<sub>2</sub> 물질 기반의 전자소자 연구
이탁희,김태영,조경준,박진수,Lee, Takhee,Kim, Tae-Young,Cho, Kyungjune,Pak, Jinsu 한국진공학회 2016 진공 이야기 Vol.3 No.1
Molybdenum disulfide ($MoS_2$), which has 0.65 nm-thick atomic layer, can be easily separated layer by layer due to weak van der Waals interactions in out-of-plane direction. ($MoS_2$), has a good potential in nanoelectronics, because it has high electrical mobility and On/Off ratio. Its band gap energy changes from indirect to direct band gap energy as it goes from bulk to monolayer. Therefore, atomically thin ($MoS_2$), is widely studied in academic and engineering fields. Here, we introduce the research of atomically thin $MoS_2$ and discuss the research directions.
이탁희(Takhee Lee),김태영(Tae-Young Kim),조경준(Kyungjune Cho),박진수(Jinsu Pak) 한국진공학회 2016 진공 이야기 Vol.3 No.1
Molybdenum disulfide (MoS₂), which has 0.65 nm-thick atomic layer, can be easily separated layer by layer due to weak van der Waals interactions in out-of-plane direction. MoS₂ has a good potential in nanoelectronics, because it has high electrical mobility and On/Off ratio. Its band gap energy changes from indirect to direct band gap energy as it goes from bulk to monolayer. Therefore, atomically thin MoS₂ is widely studied in academic and engineering fields. Here, we introduce the research of atomically thin MoS₂ and discuss the research directions.