http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
POTENTIAL PROFILE MEASUREMENT OF CARBON NANOTUBE FETs BASED ON THE ELECTROSTATIC FORCE DETECTION
YUKI OKIGAWA,TAKEO UMESAKA,YUTAKA OHNO,SHIGERU KISHIMOTO,TAKASHI MIZUTANI 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2008 NANO Vol.3 No.1
We have measured the potential distribution on carbon nanotube (CNT) field-effect transistors (FETs) using electrostatic force microscopy (EFM) and Kelvin probe force microscopy (KFM). Clearer potential profiles were obtained by EFM than by KFM. When the CNT-FET is in the ON state, the EFM image shows uniform potential distribution along the CNT. In contrast, when the CNT-FET is in the OFF state, nonuniform potential image with dark spots are obtained. The dark spots can be attributed to the defects in the CNTs.