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Electronic and optical properties of GIZO thin film grown on SiO<sub>2</sub>/Si substrates
Tahir, Dahlang,Lee, Eun Kyoung,Kwon, Hyuk Lan,Kun Oh, Suhk,Kang, Hee Jae,Heo, Sung,Lee, Eun Ha,Chung, Jae Gwan,Lee, Jae Cheol,Tougaard, Sven John Wiley Sons, Ltd. 2010 Surface and interface analysis Vol.42 No.6
<P>The electronic and optical properties of GaInZnO (GIZO) thin films grown on SiO<SUB>2</SUB>/Si by r.f. magnetron sputtering were obtained by means of XPS and reflection electron energy loss spectroscopy (REELS). The optical properties represented by the dielectric function ϵ, refractive index n, extinction coefficient k and transmission coefficient T of GIZO thin films were obtained from a quantitative analysis of the REELS spectra. When the concentration ratios of Ga:In:Zn in GIZO thin films are 1:1:1, 2:2:1, 3:2:1 and 4:2:1, the bandgap values are 3.2, 3.2, 3.4 and 3.6 eV, respectively. The optical properties were determined from the energy loss of the REELS spectra by using quantitative analysis of electron energy loss spectra (QUEELS)-ϵ(k, ω)-REELS software. The optical properties depend on the Ga concentration, and the transmission in the visible region improved with increasing Ga concentration in GIZO. Copyright © 2010 John Wiley & Sons, Ltd.</P>
Reflection electron energy loss spectroscopy for ultrathin gate oxide materials
Shin, Hye Chung,Tahir, Dahlang,Seo, Soonjoo,Denny, Yus Rama,Oh, Suhk Kun,Kang, Hee Jae,Heo, Sung,Chung, Jae Gwan,Lee, Jae Cheol,Tougaard, Sven Heyden & Son 2012 Surface and interface analysis Vol.44 No.6
<P>The band alignment of HfZrO<SUB>4</SUB> gate oxide thin films on Si (100) deposited by the atomic layer deposition method has been investigated using reflection electron energy loss spectroscopy and XPS. The band gap of HfZrO<SUB>4</SUB> gate oxide thin film is 5.40 ± 0.05 eV. The valence band offset (Δ<I>E</I><SUB>v</SUB>) and the conduction band offset (Δ<I>E</I><SUB>c</SUB>) are 2.50 ± 0.05 eV and 1.78 ± 0.05 eV, respectively. These values satisfy the minimum requirement for the hole and electron barrier heights of larger than 1 eV for device applications. We have demonstrated that the quantitative analysis of reflection electron energy loss spectroscopy spectra obtained from HfZrO<SUB>4</SUB> thin films provides us a straightforward way to determine the optical properties and the inelastic mean free path of ultrathin gate oxide materials. Copyright © 2012 John Wiley & Sons, Ltd.</P>