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Vineet Kumar Singh,Jampana Nagaraju,Sushobhan Avasthi 한국물리학회 2019 Current Applied Physics Vol.19 No.3
We demonstrate radial p-n junction silicon solar cells with micro-pillar array with higher short-circuit current and open-circuit voltage than comparable planar silicon solar cells. Micro-pillar array, fabricated by RIE, acts as an effective anti-reflection coating for visible light with less than 6% reflection. Compared to devices with planar surface, devices with micro-pillar array show a 27% enhancement in short circuit current. The radial p-n junction of the micro-pillars also improves extraction probability of the photogenerated carriers, which further increases the short circuit current. Typically, micro-pillar solar cells suffer from high recombination losses at the Si/metal interface, resulting in poor VOC. Our devices prevent these recombination losses by planarizing the Si/ metal interface, leading to an open circuit voltage of 622 mV, the highest ever reported for micro-pillar solar cells. This planarized contact also reduces the series resistance associated with radial junctions, leading to series resistance of ≤0.50 Ω-cm2 and fill factors up to 76.7%.
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Arun Singh Chouhan,Naga Prathibha Jasti,Shreyash Hadke,Srinivasan Raghavan,Sushobhan Avasthi 한국물리학회 2017 Current Applied Physics Vol.17 No.10
Spin coated perovskite thin films are known to have an issue of pinholes & poor morphology control which lead to poor device-to-device repeatability, that is an impediment to scale-up. In this work, Methylamine vapor annealing process is demonstrated which consistently leads to high-quality perovskite thin-films with an average grain-size of 10e15 mm. The improvement in film morphology enables improvement in effective carrier recombination lifetime, from 21 ms in as-deposited films to 54 ms in vapor-annealed films. The annealed films with large-grains are also more stable in ambient conditions. Devices made on annealed perovskite films are very consistent, with a standard deviation of only 0.7%. Methylamine vapor annealing process is a promising method of depositing large-grain CH3NH3PbI3 films with high recombination lifetime and the devices with improved performance.
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