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RISS 인기검색어
- 검색키워드
- 저자 : Sri Silpa, D. (검색결과 2 건)
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Rajagopal Reddy, V.,Sri Silpa, D.,Yun, H.J.,Choi, C.J. Academic Press 2014 Superlattices and microstructures Vol.71 No.-
The electrical and structural properties of a fabricated W/p-InP Schottky barrier diode (SBD) have been investigated as a function of annealing temperature. The W/p-InP SBD exhibits good rectification behavior. The barrier height (BH) and ideality factor of the W/p-InP SBD are determined to be 0.82eV (I-V)/0.98eV (C-V) and 1.34, respectively. However, the BH is increases to 0.87eV (I-V)/1.08eV (C-V) after annealing at 300<SUP>o</SUP>C. When the SBD is annealed at 400<SUP>o</SUP>C, the BH decreases to 0.74eV (I-V)/0.86eV (C-V) and the ideality factor increases to 1.45. Results indicate that a maximum BH is obtained on the W/p-InP SBD at 300<SUP>o</SUP>C. Norde method is also employed to determine BHs of W/p-InP SBD which are in good agreement with those estimated by the I-V method. Further, Cheung method is used to estimate the series resistance of the W/p-InP SBD, and the consistency is checked using the Norde method. Besides, the energy distribution of interface state density is determined from the forward bias I-V data at different annealing temperatures. Auger electron spectroscopy and X-ray diffraction studies revealed that the formation of W-P interfacial phases at the W/p-InP interface may be the cause for the increase of BH upon annealing at 300<SUP>o</SUP>C. AFM results indicated that the overall surface morphology of the W/p-InP SBD did not change significantly at elevated temperatures.
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V. Rajagopal Reddy,D. Sri Silpa,V. Janardhanam,윤형중,최철종 대한금속·재료학회 2015 ELECTRONIC MATERIALS LETTERS Vol.11 No.1
The electrical, structural and surface morphological properties of Yb/p-InPSchottky barrier diode (SBD) have been investigated at different annealingtemperatures. The determined Schottky barrier height (SBH) and idealityfactor n of the as-deposited Yb/p-InP SBD are 0.68 eV (I-V)/0.81 eV(C-V)and 1.44 respectively. After annealing at 300°C, the SBH of Yb/p-InP SBDincreases to 0.72 eV (I-V)/0.88 eV (C-V). When the contact is annealed at400°C, the SBH slightly decreases to 0.67 eV (I-V)/0.80 eV (C-V). Theseresults reveal that the optimum annealing temperature for Yb/p-InP SBD is300°C. Cheung’s functions are also employed to determine the seriesresistance of the Yb/p-InP SBD. Using Terman’s method, the interface statedensity is estimated for Yb/p-InP SBD at different annealing temperatures. The XPS results reveal that the existence of phosphorous-rich surface afterthe annealing. The AES and XRD results showed that the formation ofphosphide phases at the Yb/p-InP interface may be the reason for theincrease of SBH after annealing at 300°C. The decrease in the BH afterannealing at 400°C may be due to the formation of indium phases at theinterface. The overall surface morphology of the Yb Schottky contact isfairly smooth at elevated temperatures.
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