http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Sibao Ding,Panbao Wang,Wei Wang,Dianguo Xu,Frede Blaabjerg 전력전자학회 2019 ICPE(ISPE)논문집 Vol.2019 No.5
The parasitic inductance from the wirings and the terminals of SiC MOSFETs has a significant impact on the behavior of current sharing of parallel-connected SiC MOSFETs. To investigate the mechanism of current mismatch in response to the parasitic inductance, the circuit model of parallel-connected SiC MOSFETs is built to obtain the mathematic relationship between current difference and parasitic inductance in both dynamic and static states. Because the way of connecting the parallel-connected SiC MOSFETs with the coupled inductor in series can lead to the turn-off voltage ringing and overshoot, an improved structure is further proposed in this paper. A RCD snubber circuit is added into the proposed structure by referring to the coupled inductor with transformer in fly-back converter. Finally, the approach is verified through the LTspice software and experiments.