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Hong, Seongin,Yoo, Geonwook,Kim, Dong Hak,Song, Won Geun,Le, Ong Kim,Hong, Young Ki,Takahashi, Kaito,Omkaram, Inturu,Son, Do Ngoc,Kim, Sunkook WILEY‐VCH Verlag Berlin GmbH 2017 Physica status solidi. PSS. C, Current topics in s Vol.14 No.3
<P>Seongin Hong et al. (article no. <url href='http://doi.wiley.com/10.1002/pssc.201600262'>1600262</url>) have investigated the polyethylenimine (PEI) doping mechanism and its effect on the electrical and optical properties of multilayer MoS<SUB>2</SUB> field effect transistors (FETs). Density functional theory (DFT) calculation and X‐ray photoelectron spectroscopy (XPS) measurement confirm that the PEI molecules were successfully doped and formed Mo–N bonds on the MoS<SUB>2</SUB> channel, generating new energy states near the valence band. The strong n‐doping changed the threshold voltage as well as the Schottky barrier width attributed to the induced interfacial dipoles. Therefore, the ON‐current of the doped MoS<SUB>2</SUB> FETs was improved in comparison with the pristine FETs. Furthermore, the PEI doping also enhanced the photoresponsivity of the MoS<SUB>2</SUB> FETs from 0.14 A/W to 4.41 A/W. This study suggests that PEI molecular doping could be widely applicable to two‐dimensional materials in order to improve the electrical and optical properties of respective devices.</P>
Recent progress in high-mobility thin-film transistors based on multilayer 2D materials
Hong, Young Ki,Liu, Na,Yin, Demin,Hong, Seongin,Kim, Dong Hak,Kim, Sunkook,Choi, Woong,Yoon, Youngki IOP 2017 Journal of Physics. D, Applied Physics Vol.50 No.16
<P>Two-dimensional (2D) layered semiconductors are emerging as promising candidates for next-generation thin-film electronics because of their high mobility, relatively large bandgap, low-power switching, and the availability of large-area growth methods. Thin-film transistors (TFTs) based on multilayer transition metal dichalcogenides or black phosphorus offer unique opportunities for next-generation electronic and optoelectronic devices. Here, we review recent progress in high-mobility transistors based on multilayer 2D semiconductors. We describe the theoretical background on characterizing methods of TFT performance and material properties, followed by their applications in flexible, transparent, and optoelectronic devices. Finally, we highlight some of the methods used in metal-semiconductor contacts, hybrid structures, heterostructures, and chemical doping to improve device performance.</P>
대한민국 1세대 아파트를 통해 본 한국인의 주거문화 변화에 관한 연구
홍성인(SeongIn Hong),임수영(SooYoung Lim) 인문사회과학기술융합학회 2018 예술인문사회융합멀티미디어논문지 Vol.8 No.4
근대화의 상징이자 한국인의 주거역사의 한 자락을 담당했던 한국의 1세대 아파트들이 점점 사라지고 있다. 본 연구는 우리나라 1세대 아파트가 한국인의 새로운 주거문화로 자리잡게 된 계기를 알아보고 현재 우리나라 주거 형태 중 1위를 차지한 아파트 주거가 개선되어야 할 방향을 제시하는데 도움을 주고자 한다. 한국의 아파트 단지는 페리의 근린주구이론의 영향을 받았으며 급격한 도시화와이에 따른 주택난에 대한 대안으로 형성되었다. 한국의 아파트는 국제건축 원리의 체계적 수용의 결과물이라기보다는 서구의 이론들이 당시 한국의 역사적, 문화적, 정치적 상황에 맞게 변용되며 나타난 현상에 가깝다. 초창기 하위계층을 위한 주거형태였던 아파트는 부동산 소유가 확산되면서 점차 도시 중산층의 주거 양식으로 자리 잡았고 현재는 모든 계층이 가장 선호하는 주거 형태가 되었다. 한국의 아파트는 내부 공간에서는 서구식 입식 생활과 전래의 좌식생활이 혼합되어 있다. 서양식구조와 가구를 도입하였으나 행동양식은 아직 좌식생활의 양상을 보인다. 외부 공간에서는 전통 주거의 풍수지리에 입각한 남향 선호가 나타나며 이에 따라 단지계획 시 거실 등 일부 공간만이라도 남향으로 배치하는 현상이 나타난다. 앞으로의 아파트에는 외부의 공공 공간에 대해 관심과 변화가 클 것이다. 현재 유니버설 디자인등의 새로운 영역이 점점 계획 단계에 반영되고 있다. 점차 자연공간 확보나 편리한 보행환경 등 아파트 주민들의 삶의 질 향상을 위한 공간 조성이 필수적일 것이다. The first generation of apartment housing, as a symbol of modernization and a significant change in Korean residential history, has been disappeared gradually. This study aims to understand why the first generation of apartment housing had been settled down as a new way of residence in Korea at 1960s and help proposing direction for the apartment housing, which is the most representative housing style in modern Korea, to be improved. Apartment housing in Korea was affected by neighborhood theory of Ferry and generated as a solution for radical urbanization and housing shortage. So, it is a phenomenon of unplanned applying imported theories to historical, cultural and political situations in Korea, rather than an organized result of accepting CIAM principles. Apartment housing for lower class at the first time had become the one for urban middle class with expansion of purchasing and possessing real estate. Today, it is most popular housing among all classes. Standing lifestyle and sitting lifestyle are mixed in the interior space of Korean apartment. Western structure and furniture have been adopted while sticking to sitting lifestyle yet. South is still favored based on Feng shui custom for the exterior space. The traditional preference have had influence on a layout of residential complex. So, the rooms are placed facing south as much as the can. Exterior space of apartment housing will be a bigger issue in future. Upcoming fields such as universal design or CPTED are increasingly taking place in architectural planning. Spatial care like offering natural environment or easy walking network will be essential for qualified life for the residents.
Chemical Doping Effects in Multilayer MoS<sub>2</sub> and Its Application in Complementary Inverter
Yoo, Hocheon,Hong, Seongin,On, Sungmin,Ahn, Hyungju,Lee, Han-Koo,Hong, Young Ki,Kim, Sunkook,Kim, Jae-Joon American Chemical Society 2018 ACS APPLIED MATERIALS & INTERFACES Vol.10 No.27
<P>Multilayer MoS<SUB>2</SUB> has been gaining interest as a new semiconducting material for flexible displays, memory devices, chemical/biosensors, and photodetectors. However, conventional multilayer MoS<SUB>2</SUB> devices have exhibited limited performances due to the Schottky barrier and defects. Here, we demonstrate poly(diketopyrrolopyrrole-terthiophene) (PDPP3T) doping effects in multilayer MoS<SUB>2</SUB>, which results in improved electrical characteristics (∼4.6× higher on-current compared to the baseline and a high current on/off ratio of 10<SUP>6</SUP>). Synchrotron-based study using X-ray photoelectron spectroscopy and grazing incidence wide-angle X-ray diffraction provides mechanisms that align the edge-on crystallites (97.5%) of the PDPP3T as well as a larger interaction with MoS<SUB>2</SUB> that leads to dipole and charge transfer effects (at annealing temperature of 300 °C), which support the observed enhancement of the electrical characteristics. Furthermore, we demonstrate a complementary metal-oxide-semiconductor inverter that uses a p-type MoSe<SUB>2</SUB> and a PDPP3T-doped MoS<SUB>2</SUB> as charging and discharging channels, respectively.</P> [FIG OMISSION]</BR>