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High performance foldable polymer thin film transistors with a side gate architecture
Lee, Sung Won,Kim, Bong Soo,Park, Jong Jin,Hur, Jae Hyun,Kim, Jong Min,Sekitani, Tsuyoshi,Someya, Takao,Jeong, Unyong Royal Society of Chemistry 2011 Journal of materials chemistry Vol.21 No.46
<P>Foldable polymer thin film transistors gated by an ion gel dielectric were fabricated on a polymer substrate. Side gate structure was employed to simplify the fabrication process, which is a unique advantage of the transistors based on the ion gel dielectric. Utilizing the diffusion of crosslinkable oligomers in the P3HT thin films followed by UV gelation through a patterned mask, the ion gel made a strong bonding to the P3HT layer. Due to the deformable nature of the ion gel dielectric, the transistor arrays were electrically and mechanically stable at repeated folding events.</P> <P>Graphic Abstract</P><P>High performance foldable polymer thin film transistors with an ion gel dielectric were fabricated using a side gate architecture which is a unique advantage of the ion gel dielectric transistors. Due to the deformable nature of the ion gel dielectric and the embedded metal electrodes, the transistors were electrically and mechanically stable on repeated folding events. <IMG SRC='http://pubs.rsc.org/services/images/RSCpubs.ePlatform.Service.FreeContent.ImageService.svc/ImageService/image/GA?id=c1jm13079j'> </P>