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Han, Di,Sarlioglu, Bulent The Korean Institute of Power Electronics 2015 JOURNAL OF POWER ELECTRONICS Vol.15 No.6
Gallium nitride (GaN)-based power switching devices, such as high-electron-mobility transistors (HEMT), provide significant performance improvements in terms of faster switching speed, zero reverse recovery, and lower on-state resistance compared with conventional silicon (Si) metal-oxide-semiconductor field-effect transistors (MOSFET). These benefits of GaN HEMTs further lead to low loss, high switching frequency, and high power density converters. Through simulation and experimentation, this research thoroughly contributes to the understanding of performance characterization including the efficiency, loss distribution, and thermal behavior of a 160-W GaN-based synchronous boost converter under various output voltage, load current, and switching frequency operations, as compared with the state-of-the-art Si technology. Original suggestions on design considerations to optimize the GaN converter performance are also provided.
Commutation Strategy of Reconfigurable Grid-Connected Inverter to Improve Power Quality
W. Choi,B. Sarlioglu 전력전자학회 2019 ICPE(ISPE)논문집 Vol.2019 No.5
A reconfigurable grid-connected inverter, called shunt-series-switched multi-functional grid-connected inverter (SSS-MFGCI), can be connected to the grid in shunt or series according to the different power quality problems and grid conditions. It is a key technology of SSS-MFGCI to make a smooth transition from shunt to series or vice versa by commutating bidirectional switches. These bidirectional switches operating in four-quadrant should be conducting in both current polarities and blocking both voltage polarities. Therefore, this paper proposes a proper commutation method of bidirectional switches of SSS-MFGCI. Switch realization and commutation strategies of bidirectional switches are presented. Simulated results are presented using MATLAB/Simulink to prove the concept of a proposed commutation strategy.
Di Han,Bulent Sarlioglu 전력전자학회 2015 JOURNAL OF POWER ELECTRONICS Vol.15 No.6
Gallium nitride (GaN)-based power switching devices, such as high-electron-mobility transistors (HEMT), provide significant performance improvements in terms of faster switching speed, zero reverse recovery, and lower on-state resistance compared with conventional silicon (Si) metal–oxide–semiconductor field-effect transistors (MOSFET). These benefits of GaN HEMTs further lead to low loss, high switching frequency, and high power density converters. Through simulation and experimentation, this research thoroughly contributes to the understanding of performance characterization including the efficiency, loss distribution, and thermal behavior of a 160-W GaN-based synchronous boost converter under various output voltage, load current, and switching frequency operations, as compared with the state-of-the-art Si technology. Original suggestions on design considerations to optimize the GaN converter performance are also provided.
Design Optimization of Surface Permanent Magnet Machines With Fractional Slot Concentrated Windings
Seun Guy Min,Bulent Sarlioglu 전력전자학회 2015 ICPE(ISPE)논문집 Vol.2015 No.6
This paper presents a closed-form design optimization of surface permanent magnet (SPM) machines using concentrated windings layout. Over the last few years, the interest in the use of SPM machines with a high pole number for low speed direct-drive applications has significantly increased. In this paper, the analytical design model is developed and particle swarm optimization (PSO) is applied for achieving optimal specific power and efficiency. In particular, a penalty function is added to the objective function in order to avoid unwanted results. PSO results show that pancake type motor is suitable for high specific power. The performance characteristics of machine designed by closed-form analysis are verified using finite element analysis (FEA). Finally, results of the closed-form analysis and FEA have been validated using experimental data, demonstrating a strong correlation between key machine parameters.
High-Frequency GaN HEMTs Based Point-of-Load Synchronous Buck Converter with Zero-Voltage Switching
Lee, Woongkul,Han, Di,Morris, Casey T.,Sarlioglu, Bulent The Korean Institute of Power Electronics 2017 JOURNAL OF POWER ELECTRONICS Vol.17 No.3
Gallium nitride (GaN) power switching devices are promising candidates for high switching frequency and high efficiency power conversion due to their fast switching, low on-state resistance, and high-temperature operation capability. In order to facilitate the use of these new devices better, it is required to investigate the device characteristics and performance in detail preferably by comparing with various conventional silicon (Si) devices. This paper presents a comprehensive study of GaN high electron mobility transistor (HEMT) based non-isolated point-of-load (POL) synchronous buck converter operating at 2.7 MHz with a high step-down ratio (24 V to 3.3 V). The characteristics and performance of GaN HEMT and three different Si devices are analytically investigated and the optimal operating point for GaN HEMT is discussed. Zero-voltage switching (ZVS) is implemented to minimize switching loss in high switching frequency operation. The prototype circuit and experimental data support the validity of analytical and simulation results.
Woongkul Lee,Di Han,Casey Morris,Bulent Sarlioglu 전력전자학회 2015 ICPE(ISPE)논문집 Vol.2015 No.6
GaN power switching devices are promising candidates for high switching frequency and high efficiency operations due to their lower on-resistance and faster switching capabilities compared to conventional silicon power devices. As the switching frequency increases up to the MHz-level, soft switching plays an important role to further minimize the switching losses and improve the efficiency. In this paper, a GaN-based synchronous buck converter operating with zero-voltage resonant-transition (ZVRT) switching in synchronous conduction mode is proposed. The ZVRT switching converter offers a favorable trade-off between switching and conduction losses especially in GaN-based DC-DC converters. The efficiency of the ZVRT switching converter providing 20 W output power from 28 V input voltage improves up to 7% at 3 MHz switching frequency.
High-Frequency GaN HEMTs Based Point-of-Load Synchronous Buck Converter with Zero-Voltage Switching
Woongkul Lee,Di Han,Casey T. Morris,Bulent Sarlioglu 전력전자학회 2017 JOURNAL OF POWER ELECTRONICS Vol.17 No.3
Gallium nitride (GaN) power switching devices are promising candidates for high switching frequency and high efficiency power conversion due to their fast switching, low on-state resistance, and high-temperature operation capability. In order to facilitate the use of these new devices better, it is required to investigate the device characteristics and performance in detail preferably by comparing with various conventional silicon (Si) devices. This paper presents a comprehensive study of GaN high electron mobility transistor (HEMT) based non-isolated point-of-load (POL) synchronous buck converter operating at 2.7 MHz with a high step-down ratio (24 V to 3.3 V). The characteristics and performance of GaN HEMT and three different Si devices are analytically investigated and the optimal operating point for GaN HEMT is discussed. Zero-voltage switching (ZVS) is implemented to minimize switching loss in high switching frequency operation. The prototype circuit and experimental data support the validity of analytical and simulation results.