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A W-Band Air-Cavity Filter Integrated on a Thin-Film Substrate
Sangsub Song,Kwang-Seok Seo IEEE 2009 IEEE microwave and wireless components letters Vol.19 No.4
<P>In this letter, a W-band air-cavity filter has been developed on a thin-film substrate using a lossy silicon substrate as a base plate, which is suitable for a mm-wave system-on-package. The lossy silicon suppresses a parasitic substrate mode excited in a thin-film substrate, while a coupling loss between a transmission line and a resonator is minimized by etching the backside of the lossy silicon substrate underneath the coupling area. In the backside etching process, 70 mum of silicon was left for mechanical support of the thin-film substrate. The resonator was fabricated using a low-cost silicon micromachining technique and was flip-chip integrated on a thin-film substrate. The fabricated air-cavity resonator showed an unloaded <I>Q</I> of 851 at a resonant frequency of 94.18 GHz. Improvement in the coupling loss by the backside etching process was verified with measurement results. The fabricated filter exhibited an insertion loss of 1.75 dB and a return loss better than 14.5 dB with a 1.3% 3 dB fractional bandwidth at a center frequency of 93.8 GHz.</P>
Sangsub Song,Youngmin Kim,Wooyeol Choi,Youngwoo Kwon,Kwang-Seok Seo IEEE 2009 IEEE microwave and wireless components letters Vol.19 No.2
<P>This letter presents a V-band cavity oscillator based on a thin-film substrate with a flip-chip interconnection. A cavity serves as a parallel-feedback element, which is fabricated using a micromachining technique and is flip-chip mounted on a thin-film substrate with integrated passives. A GaAs pseudomorphic high electron-mobility transistor is flip-chip mounted on the thin-film substrate as an active device to generate negative resistance. The fabricated cavity with I/O ports in the same side has a loaded <I>Q</I> of 352, a coupling of 5.3 dB, and a resonant frequency of 59.88 GHz. The developed parallel-feedback cavity oscillator has an output power of about 9.7 dBm and a low phase noise of -112 dBc/Hz at 1 MHz offset with an oscillation frequency at 59.84 GHz. This work allows a low-cost mm-wave frequency source with high performances.</P>
Sangsub Song,Chan-Sei Yoo,Donghwan Kim,Sungsoon Choi,Jong-Chul Park,Kwang-Seok Seo IEEE 2006 IEEE MTT-S International Microwave Symposium diges Vol.2006 No.6
<P>In this paper, we developed millimeter-wave (mm-wave) integrated passives on the high-performance MCM-D technology considering flip-chip interconnection, which has the improved electrical, thermal, and thermo-mechanical performances for the flip-chip structure. These integrated passives using thin-film microstrip (TFMS) line include the Wilkinson power divider, the broad-side Lange coupler, the balun using the broad-side Lange couplers, and the band-pass filter. The fabricated Wilkinson power divider has an insertion loss less than 0.8 dB and better than 15 dB matching and isolation over a wide frequency range for W-band (75 GHz ~ 110 GHz). The broad-side Lange coupler shows the transmission and coupling loss of 3.8 plusmn 0.2 dB and return loss better than 18 dB in W-band. The developed balun exhibits that insertion loss is less than 2.5 dB and amplitude and absolute phase imbalance is less than 1.2 dB and plusmn3deg, respectively, in W-band. And the band-pass filter for the V-band application was designed and implemented with insertion loss of 2.6 dB at 56 GHz. These high-performance integrated passives on SNU's MCM-D technology can make mm-wave modules to be compact, high-performance, and low-manufacturing cost</P>
Sangsub Song,Youngmin Kim,Jimin Maeng,Heeseok Lee,Youngwoo Kwon,Kwang-Seok Seo IEEE 2009 IEEE TRANSACTIONS ON ADVANCED PACKAGING Vol.32 No.1
<P>In this paper, a system-on-package (SOP) technology using a thin-film substrate with a flip-chip interconnection has been developed for compact and high-performance millimeter-wave (mm-wave) modules. The thin-film substrate consists of Si-bumps, ground-bumps, and multilayer benzocyclobutene (BCB) films on a lossy silicon substrate. The lossy silicon substrate is not only a base plate of the thin-film substrate, but also suppresses the parasitic substrate mode excited in the thin-film substrate. Suppression of the substrate mode was verified with measurement results. The multilayer BCB films and the ground-bumps provide the thin-film substrate with high-performance integrated passives for the SOP capability. A broadband port terminator and a V-band broad-side coupler based on thin-film microstrip (TFMS) circuits were fabricated and characterized as mm-wave integrated passives. The Si-bumps dissipate the heat generated during the operation of flipped chips as well as provide mechanical support. The power dissipation capability of the Si-bumps was confirmed with an analysis of DC-IV characteristics of GaAs pseudomorphic high electron-mobility transistors (PHEMTs) and radio-frequency performances of a V-band power amplifier (PA). In addition, the flip-chip transition between a TFMS line on the thin-film substrate and a coplanar waveguide (CPW) line on a flipped chip was optimized with a compensation network, which consists of a high-impedance and low-impedance TFMS line and a removed ground technique. As an implementation example of the mm-wave SOP technology, a V-band power combining module (PCM) was developed on the thin-film substrate with the flip-chip interconnection. The V-band PCM incorporating two PAs with broadside couplers showed a combining efficiency higher than 78%.</P>
Inchan Ju,Youngmin Kim,Sanghyo Lee,Sangsub Song,Jangsoo Lee,Changyul Cheon,Kwang-Seok Seo,Youngwoo Kwon IEEE 2011 IEEE microwave and wireless components letters Vol.21 No.11
<P>We report V-band fully integrated planar beam-steering Amplitude-Shift-Keying (ASK) transmitter (Tx) and receiver (Rx) system using advanced thin-film technology on a silicon (Si) mother board. BCB-on-Si System-on-Package (SOP) technology allows Rotman lens, patch antennas, and other passive elements to be integrated on a Si substrate together with active circuits. All MMIC chipsets are flip-chipped on a BCB substrate. Tx beam-steering is achieved by a combination of a SP3T switch and a Rotman lens terminated with the embedded resistors. The measured Tx antenna gain is 17.5 dBi and the effective isotropic radiated power is 26 dBm. The Tx module can steer the beam to three different directions of 0<SUP>°</SUP> and ±12<SUP>°</SUP> in the H-plane. A wireless link was successfully demonstrated at a data rate of 2 Gb/s with less than 10<SUP>-5</SUP> bit error rate.</P>