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N. PADMA,MANORANJAN GHOSH,SHASHWATI SEN,R. TEWARI 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2014 NANO Vol.9 No.6
Nanocomposites of n-type Zinc Oxide (ZnO) and p-type copper phthalocyanine (CuPc) weresynthesized using solution route and the electrical properties of heterojunctions of ZnO and CuPcin the nanocomposite ¯lm was studied. For comparison, electrical properties of bilayer hetero-junction devices using ZnO nanostructure drop cast ¯lm and thermally evaporated CuPc werealso studied. Recti¯cation ratio (RR) of about 28 and 5.5 was obtained at 4 V for devices withnanocomposite ¯lm and bilayer heterojunctions indicating improved formation of p – n junctioncharacteristics for nanocomposite ¯lms. Values of ideality factor, barrier height at the p – njunction interface and series resistance were estimated using di®erent methods like semilog plots,Cheung and Norde's methods. Ideality factor estimated from semilog plots and Cheung'smethods were found to be higher than unity indicating deviation from ideal diode behavior. Barrier height estimated from di®erent methods was about 0.7 eV. Series resistance measuredusing Cheung and Norde's methods were found to be about 92 K ? and 21 K ? , respectively. Bilayer heterojunction devices exhibited much higher series resistance, ideality factor and barrierheight as estimated using all the above-mentioned methods as compared to the devices withnanocomposite ¯lm. The above results indicate intimate mixing and improved interface betweenZnO and CuPc in the in situ synthesized nanocomposite ¯lm thereby o®ering improved p – njunction characteristics.