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Sander, D,Valenzuela, S O,Makarov, D,Marrows, C H,Fullerton, E E,Fischer, P,McCord, J,Vavassori, P,Mangin, S,Pirro, P,Hillebrands, B,Kent, A D,Jungwirth, T,Gutfleisch, O,Kim, C G,Berger, A Institute of Physics Publishing Ltd. 2017 Journal of Physics. D, Applied Physics Vol.50 No.36
<P>Building upon the success and relevance of the 2014 Magnetism Roadmap, this 2017 Magnetism Roadmap edition follows a similar general layout, even if its focus is naturally shifted, and a different group of experts and, thus, viewpoints are being collected and presented. More importantly, key developments have changed the research landscape in very relevant ways, so that a novel view onto some of the most crucial developments is warranted, and thus, this 2017 Magnetism Roadmap article is a timely endeavour. The change in landscape is hereby not exclusively scientific, but also reflects the magnetism related industrial application portfolio. Specifically, Hard Disk Drive technology, which still dominates digital storage and will continue to do so for many years, if not decades, has now limited its footprint in the scientific and research community, whereas significantly growing interest in magnetism and magnetic materials in relation to energy applications is noticeable, and other technological fields are emerging as well. Also, more and more work is occurring in which complex topologies of magnetically ordered states are being explored, hereby aiming at a technological utilization of the very theoretical concepts that were recognised by the 2016 Nobel Prize in Physics.</P> <P>Given this somewhat shifted scenario, it seemed appropriate to select topics for this Roadmap article that represent the three core pillars of magnetism, namely magnetic materials, magnetic phenomena and associated characterization techniques, as well as applications of magnetism. While many of the contributions in this Roadmap have clearly overlapping relevance in all three fields, their relative focus is mostly associated to one of the three pillars. In this way, the interconnecting roles of having suitable magnetic materials, understanding (and being able to characterize) the underlying physics of their behaviour and utilizing them for applications and devices is well illustrated, thus giving an accurate snapshot of the world of magnetism in 2017.</P> <P>The article consists of 14 sections, each written by an expert in the field and addressing a specific subject on two pages. Evidently, the depth at which each contribution can describe the subject matter is limited and a full review of their statuses, advances, challenges and perspectives cannot be fully accomplished. Also, magnetism, as a vibrant research field, is too diverse, so that a number of areas will not be adequately represented here, leaving space for further Roadmap editions in the future. However, this 2017 Magnetism Roadmap article can provide a frame that will enable the reader to judge where each subject and magnetism research field stands overall today and which directions it might take in the foreseeable future.</P> <P>The first material focused pillar of the 2017 Magnetism Roadmap contains five articles, which address the questions of atomic scale confinement, 2D, curved and topological magnetic materials, as well as materials exhibiting unconventional magnetic phase transitions. The second pillar also has five contributions, which are devoted to advances in magnetic characterization, magneto-optics and magneto-plasmonics, ultrafast magnetization dynamics and magnonic transport. The final and application focused pillar has four contributions, which present non-volatile memory technology, antiferromagnetic spintronics, as well as magnet technology for energy and bio-related applications. As a whole, the 2017 Magnetism Roadmap article, just as with its 2014 predecessor, is intended to act as a reference point and guideline for emerging research directions in modern magnetism.</P>
Talantsev, A,Lu, Y,Fache, T,Lavanant, M,Hamadeh, A,Aristov, A,Koplak, O,Morgunov, R,Mangin, S IOP 2018 Journal of Physics, Condensed Matter Vol.30 No.13
<P>Two synthetic antiferromagnet bilayer systems with strong perpendicular anisotropy CoFeB/Ta/CoFeB and Pt/Co/Ir/Co/Pt have been grown using sputtering techniques. For both systems two types of magnetization transitions have been studied. The first one concerns transitions from a state where magnetizations of the two magnetic layers are parallel (<I>P</I> state) to a state where magnetizations of the two layers are aligned antiparallel (<I>AP</I> state). The second one concerns transitions between the two possible antiparallel alignments (<I>AP</I>+ to <I>AP</I>−). For both systems and both transitions after-effect measurements can be understood in the frame of nucleation—propagation model. Time derivative analysis of magnetic relaxation curves and mapping of the first order reversal curves at different temperature allowed us to demonstrate the presence of different pinning centers, which number can be controlled by magnetic field and temperature.</P>
Effect of Co layer thickness on magnetic relaxation in Pt/Co/Ir/Co/Pt/GaAs spin valve
Morgunov, R.B.,L'vova, G.L.,Talantsev, A.D.,Koplak, O.V.,Fache, T.,Mangin, S. North-Holland Pub. Co 2018 Journal of magnetism and magnetic materials Vol.459 No.-
<P><B>Abstract</B></P> <P>Long magnetic relaxation (up to few hours) between stable magnetic states was analyzed in Pt/Co/Ir/Co/Pt/GaAs heterostructures of different Co layers thickness. The experimental data were compared to a large variety of theoretical models amongst which the <I>Fatuzzo-Labrune</I> one seems to be the more relevant. The contributions from domain nucleation and domain wall motion to magnetic relaxation of the spin valves were separated and evaluated. The increase of Co layer thickness suppresses the domain nucleation and enhances the domain wall propagation. The obtained data provide an understanding of the limitations of switching time in the spin valves of large area necessary for GMR biosensors.</P> <P><B>Highlights</B></P> <P> <UL> <LI> In Pt/Co/Ir/Co/Pt/GaAs heterostructures, magnetic relaxation obeys <I>Fatuzzo-Labrune</I> formalism. </LI> <LI> Contributions of reversal phase and domain walls to the magnetic relaxation of the spin valves were distinguished. </LI> <LI> Reversal phase and domain walls contributions to the magnetic relaxation depend on Co layer thickness. </LI> </UL> </P>