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Crisp, Ryan W.,Pach, Gregory F.,Kurley, J. Matthew,France, Ryan M.,Reese, Matthew O.,Nanayakkara, Sanjini U.,MacLeod, Bradley A.,Talapin, Dmitri V.,Beard, Matthew C.,Luther, Joseph M. American Chemical Society 2017 Nano letters Vol.17 No.2
<P>We developed a monolithic CdTe–PbS tandem solar cell architecture in which both the CdTe and PbS absorber layers are solution-processed from nanocrystal inks. Due to their tunable nature, PbS quantum dots (QDs), with a controllable band gap between 0.4 and ∼1.6 eV, are a promising candidate for a bottom absorber layer in tandem photovoltaics. In the detailed balance limit, the ideal configuration of a CdTe (<I>E</I><SUB>g</SUB> = 1.5 eV)–PbS tandem structure assumes infinite thickness of the absorber layers and requires the PbS band gap to be 0.75 eV to theoretically achieve a power conversion efficiency (PCE) of 45%. However, modeling shows that by allowing the thickness of the CdTe layer to vary, a tandem with efficiency over 40% is achievable using bottom cell band gaps ranging from 0.68 and 1.16 eV. In a first step toward developing this technology, we explore CdTe–PbS tandem devices by developing a ZnTe–ZnO tunnel junction, which appropriately combines the two subcells in series. We examine the basic characteristics of the solar cells as a function of layer thickness and bottom-cell band gap and demonstrate open-circuit voltages in excess of 1.1 V with matched short circuit current density of 10 mA/cm<SUP>2</SUP> in prototype devices.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/nalefd/2017/nalefd.2017.17.issue-2/acs.nanolett.6b04423/production/images/medium/nl-2016-04423k_0006.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nl6b04423'>ACS Electronic Supporting Info</A></P>
A note on the well-formed formulas of a pure functional calculus of the first order
Ryan, Joseph T. Korean Mathematical Society 1971 대한수학회보 Vol.8 No.1
The purpose of this note is to use primitive recursive functions and predicates similar to those presented by Davis [2] to show the well-known result first proved by Godel in [3] that the well-formed formulas of a pure functional calculus form a recursive set. The technique shown in this paper immediately suggests a unique approach to Theorem proving using a computer.
On constructing an unsolvable Thue system on two letters
Ryan, Joseph T. Korean Mathematical Society 1971 대한수학회보 Vol.8 No.1
This paper presents in detail the construction of an unsolvable Thue system on two letters. The approach employed consists of first constructing a Thue system ${\Gamma}$ on n letters whose decision problem is recursively unsolvable. Then along the lines suggested by Davis [1], a combinatorial system ${\Gamma}^*$ whose alphabet-consists of two letters is constructed whose decision problem is recursively solvable if and only if that for ${\Gamma}$ is.
Optical and Electrical Properties of InAs/GaAs Quantum-dot Solar Cells
Ryan P. Smith,한임식,김종수,노삼규,임재영 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.64 No.6
We investigated the optical and the electrical properties of InAs quantum-dot solar cells (QDSCs)with various InAs deposition thicknesses () via photoluminescence (PL), spectral response (SR),and current density-voltage (J-V) measurements. We fabricated three QDSCs with thicknesses of2.0, 2.5, and 3.0 monolayers (MLs). Our measurements revealed the effects of the QD size onthe spectral response, the conversion efficiency (η) and the device parameters. The QDSCs had amaximum η of 17% for = 2.0 ML under AM1.5G conditions. The change of device parameters invarious QDSCs could be explained by the effects of the balance between enhanced carrier productionfrom the QD layers and carrier trapping/re-capturing by strain-induced defect/QD states.