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Nikhil Tiwale,Satyaprasad P. Senanayak,Juan Rubio-Lara,Yury Alaverdyan,Mark E. Welland 대한금속·재료학회 2019 ELECTRONIC MATERIALS LETTERS Vol.15 No.6
Solution processing of metal oxide-based semiconductors is an attractive route for low-cost fabrication of thin flms devices. ZnO thin flms were synthesized from one-step spin coating-pyrolysis technique using zinc neodecanoate precursor. X-raydifraction (XRD), UV–visible optical transmission spectrometry and photoluminescence spectroscopy suggested conversionto polycrystalline ZnO phase for decomposition temperatures higher than 400 °C. A 15 % precursor concentration was foundto produce optimal TFT performance on annealing at 500 °C, due to generation of sufcient charge percolation pathways. Thedevice performance was found to improve upon increasing the annealing temperature and the optimal saturation mobility of0.1 cm2V−1 s−1 with ION/IOFF ratio~107was achieved at 700 °C annealing temperature. The analysis of experimental resultsbased on theoretical models to understand charge transport envisaged that the grain boundary depletion region is major sourceof deep level traps and their efective removal at increased annealing temperature leads to evolution of transistor performance.