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Stimulated N-doping of reduced graphene oxide on GaN under excimer laser reduction process
Ryu, B.D.,Han, N.,Han, M.,Chandramohan, S.,Park, Y.J.,Ko, K.B.,Park, J.B.,Cuong, T.V.,Hong, C.H. North-Holland 2014 Materials letters Vol.116 No.-
Graphene oxide coated on GaN was simultaneously reduced and doped with nitrogen via excimer laser irradiation. Nitrogen dopant was originated from the GaN during the laser-induced dissociation at high energies. This phenomenon was confirmed by the absence of C-N bond formation in laser irradiated graphene oxide on SiO<SUB>2</SUB>. A top-gated field-effect transistor based on laser reduction of graphene oxide channel on GaN showed n-type behavior via the gate voltage modulation. The present findings indicate a paradigm for the formation of graphene-nitride semiconductor interfaces.
Cuong, N.D.,Kim, D.J.,Kang, B.D.,Kim, C.S.,Yoon, S.G. Pergamon Press 2007 Microelectronics and reliability Vol.47 No.4-5
We report about developing high resistivity thin film resistors using titanium oxy-nitride. Titanium nitride films of different thicknesses ranging from 50 to 300nm were deposited on SiO<SUB>2</SUB>/Si substrates using the reactive magnetron sputtering method. After deposition, these films were annealed in the air ambient. The structural and electrical properties of the films were examined as a function of annealing temperature. The samples with various thicknesses show TiN(111) phase. The sheet resistance increases from 150 up to 420Ω/@? when the film thickness decreases from 300 to 50nm. Temperature coefficience of resistance (TCR) of the films significantly decreased with decreasing the film thickness. The TCR of 50-nm thick film is quite low, about 49ppm/K.
Khanh, P.N.,Duc, H.V.,Huong, T.T.,Son, N.T.,Ha, V.T.,Van, D.T.,Tai, B.H.,Kim, J.E.,Jo, A.R.,Kim, Y.H.,Cuong, N.M. Elsevier 2016 Fitoterapia Vol.109 No.-
<P>Phytochemical analysis of the leaves and stems of Callistemon citrinus (Curtis) Skeels led to the isolation of two new alkylphloroglucinols, gallomyrtucommulone E and F (1 and 2), along with four other known alkylphloroglucinol derivatives, gallomyrtucommulone A (3), endoperoxide G3 (4), myrtucommulone B (5), callistenone B (6) and five known triterpenoids, induding betulinic acid (7), 3 beta-acetylmorolic acid (8), 3 beta-hydroxy-urs-11-en-13(28)olide (9), diospyrolide (10) and ursolic acid (11). The structures of the natural compounds were determined from the spectroscopic evidences including 1D-/2D-NMR and HR-MS spectrometry. All the isolated compounds were assessed for the effects on the sEH inhibitory activity. The acylphloroglucinols myrtucommulone B (5)/callistenone B (6) (in mixture), and two triterpenoids, ursolic acid (11) and 3 beta-hydroxy-urs-11-en-13(28)-olide (9) displayed strong inhibition of sEH activity, with IC50 values of 0.7, 112 and 24.8 mu M, respectively. (C) 2015 Elsevier B.V. All rights reserved.</P>
Yoo, D.H.,Cuong, T.V.,Pham, V.H.,Chung, J.S.,Khoa, N.T.,Kim, E.J.,Hahn, S.H. Elsevier 2011 CURRENT APPLIED PHYSICS Vol.11 No.3
Photocatalytic TiO<SUB>2</SUB> films were prepared using RF magnetron sputtering and three kinds of graphene oxide (GO) solutions with different concentration of 0.05 mg GO, 0.03 mg GO, and 0.01 mg GO in 10 ml ethanol were coated on TiO<SUB>2</SUB> films, respectively. Structures and morphologies of the samples were examined by AFM, SEM, and Raman and photocatalytic properties under UV and visible irradiation were examined respectively. The efficiency of the photodegradation is enhanced when TiO<SUB>2</SUB> thin film was coated with GO, it is related to its giant π-conjugation system and two-dimensional planar structure and efficient charge separation by coating GO. The maximum photodegradation rate was observed for TiO<SUB>2</SUB> thin film coated with 0.03 mg GO. It is attributed to the increase of absorbance and scattering of photons through excess carbon in the photosystem.
Han, N.,Park, Y. J.,Han, M.,Ryu, B. D.,Ko, K. B.,Chandramohan, S.,Choi, C. J.,Cuong, T. V.,Hong, C. H. Elsevier Science B.V., Amsterdam. 2014 Materials letters Vol.123 No.-
dramatic reduction in threading dislocation density and stress-relaxation was simultaneously achieved in GaN epilayer using a silica nanosphere embedded structure on V-groove patterned sapphire substrate by metal-organic chemical vapor deposition. By depositing silica nanospheres at two different instances during a growth process, a two-step growth that included selective area growth and lateral overgrowth was initiated. This approach led to GaN template of high crystal quality, which was confirmed from x-ray diffraction rocking curve and micro-Raman measurements and further corroborated by transmission electron microscopy. GaN light-emitting diode fabricated by this strategy showed a significant enhancement in the light output power. (C) 2014 Elsevier B.V. All rights reserved.