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A. K. Solomon,A. Castellazzi,N. Delmonte,P. Cova 전력전자학회 2015 ICPE(ISPE)논문집 Vol.2015 No.6
This work presents the development of a highly integrated power switch, based on 70?m thin IGBTs and diodes rated at 600 V. The integration relies on advanced ceramic substrate technology, featuring double-etched patterned copper tracks for a fully bond-wire-less double-sided cooling packaging solution; viases are also used in the ceramic substrates for vertical current conduction, which enables the introduction of a ground-plane structure within the switch, with greatly reduced overall values of parasitic inductance. The paper also proposes an outline of system-level integration solutions for ensuring that low-inductance characteristics at switch level are not lost when interconnecting to input filter and load.