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HIGH VOLTAGE (8kV-1KA) GTO WITH LOW LOSSES.
Tetsuro SUEOKA,Mitsuru KEKURE,Shinzi IHRANO 전력전자학회 1989 ICPE(ISPE)논문집 Vol.- No.-
The manufacturing process of GTO with high forward clocking voltage was established. For this proce&s, the method to prevent the increase of the conduction and switching loss has been developed. The new GTO is composed by the PIN- based structuie with N-buffer layer and ringed anode emitter short. By this technique, we achieved the high blocking voltage of 8kV whose conduction and switching loss are almost as low is that of 4.5kV GTO.