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Extended Gate Field Effect Transistor Using GaN/Si Hybrids Nanostructures for pH Sensor
Manchen Zhang,Ruzhi Wang,Zhen Shen,Yuhang Ji 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2017 NANO Vol.12 No.9
The pH sensor of an extended gate field effect transistor (EGFET) with gallium nitride/silicon hybrid nanostructure is fabricated and analyzed. Si nanowires (NWs) are fabricated via the Ag-assisted electroless etching technique and are then covered by GaN NWs through plasma-enhanced chemical vapor deposition (PECVD). The GaN nanostructure is synthesized by introducing gallium oxide (Ga2O3) and nitrogen (N2) for the growth of NWs. The GaN nanowires supply a larger surface area than that of the pristine Si NWs, where there is a better sensitivity for pH sensor. The GaN/Silicon hybrid sensors exhibit a sensitivity higher (50.4 mV/pH) than that of pristine Si NWs sensors (41.2 mV/pH). This GaN/Si hybrid pH sensor prepared by simple and low-cost method may be potentially applied for cheap biosensor devices.