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- 저자 : Leila Gholamzadeh (검색결과 1 건)
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Synthesis of barium-doped PVC/Bi2WO6 composites for X-ray radiation shielding
Leila Gholamzadeh,Hamed Sharghi,Mohsen Khajeh Aminian 한국원자력학회 2022 Nuclear Engineering and Technology Vol.54 No.1
In this study, composites containing undoped and barium-doped Bi2WO6:Ba2þwere investigated for theirshielding against diagnostic X-ray. At first, Bi2WO6 and barium-doped Bi2WO6 were synthesized withdifferent weight percentages of barium oxide through a hydrothermal process. The as-synthesizednanostructures were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM),energy-dispersive X-ray spectroscopy (EDS) and Raman spectroscopy (RS). After that, some shields weregenerated with undoped and barium-doped Bi2WO6:Ba2þ nanostructure particles incorporated intopolyvinyl chloride (PVC) polymer with different thicknesses and 15% weight of the nanostructure. Finally,the prepared samples were exposed to an X-ray tube at 40, 80, and 120 kV voltages, 10 mAs and, 44.5 cmSID (i.e. the distance from the X-ray beam source to the specimen). Linear and mass attenuation coefficientswere also calculated for different samples. The results indicated that, among the samples, theone with 7.5 mmol barium-doped Bi2WO6 had the most attenuation at the voltage of 40kV, and theattenuation coefficients would increase with an increase in the amount of barium. The samples with 15and 17.5 mmol barium-doped Bi2WO6 had higher attenuation than the others at 80 and 120 kV. Moreover, the half-value layer (HVL), tenth-value layer (TVL) and 0.25 mm lead equivalent thicknesswere calculated for all the samples. The lowest HVL value was for the sample with 7.5 mmol bariumdopedBi2WO6. As the result clearly show, an increment in the barium-doping content leads to adecrease in both HVL and TVL. In every three voltages, 0.25 mm lead equivalent thickness of the barium-doped composites (7.5 mmoland 15 mmol) had less than the other composites. The lowest value of 0.25 mm lead equivalent thicknesswas 7.5 barium-doped in 40 kV voltage and 15 mmol barium-doped in 80 kV and 120 kV voltages. Theseresults were obtained only for 15% weight of the nanostructure.
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