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Heinen Jan,Schulz Tomek,Kl¨aui Mathias,Boulle Olivier,Malinowski Gregory,Swagten Henk,Koopmans Bert,Ulysse Christian,Faini Giancarlo,Ocker Berthold,Wrona Jerzy,Ahn Sung-Min,Nguyen Ngoc-Minh,Ravelosona 한국물리학회 2013 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.62 No.10
We determine in high anisotropy Pt/Co- and Ni/Co-based multilayer materials, which are candidates for high density storage applications, the contributions to the extraordinary Hall effect. In order to gain more insight into the physics underlying these processes, the dependence of the extraordinary Hall resistivity on the longitudinal resistivity is used to identify the skew scattering and the combined intrinsic and side jump effects when analyzing their variation with temperature. Furthermore, the influence of an additional amorphous CoFeB layer is shown, revealing a possibility to enhance the extraordinary Hall effect using this material.
Asymmetric Hysteresis for Probing Dzyaloshinskii–Moriya Interaction
Han, Dong-Soo,Kim, Nam-Hui,Kim, June-Seo,Yin, Yuxiang,Koo, Jung-Woo,Cho, Jaehun,Lee, Sukmock,Klä,ui, Mathias,Swagten, Henk J. M.,Koopmans, Bert,You, Chun-Yeol American Chemical Society 2016 NANO LETTERS Vol.16 No.7
<P>The interfacial Dzyaloshinskii-Moriya interaction (DMI) is intimately related to the prospect of superior domain wall dynamics and the formation of magnetic skyrmions. Although some experimental efforts have been recently proposed to quantify these interactions and the underlying physics, it is still far from trivial to address the interfacial DMI. Inspired by the reported tilt of the magnetization of the side edge of a thin film structure, we here present a quasi-static, straightforward measurement tool. By using laterally asymmetric triangular-shaped microstructures, it is demonstrated that interfacial DMI combined with an in-plane magnetic field yields a unique and significant shift in magnetic hysteresis. By systematic variation of the shape of the triangular objects combined with a droplet model for domain nucleation, a robust value for the strength and sign of interfacial DMI is obtained. This method gives immediate and quantitative access to DMI, enabling a much faster exploration of new DMI systems for future nanotechnology.</P>