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High Thermal Conductivity Silicon Nitride Ceramics
Hirao, Kiyoshi,Zhou, You,Hyuga, Hideki,Ohji, Tatsuki,Kusano, Dai The Korean Ceramic Society 2012 한국세라믹학회지 Vol.49 No.4
This paper deals with the recent developments of high thermal conductivity silicon nitride ceramics. First, the factors that reduce the thermal conductivity of silicon nitride are clarified and the potential approaches to realize high thermal conductivity are described. Then, the recent achievements on the silicon nitride fabricated through the reaction bonding and post sintering technique are presented. Because of a smaller amount of impurity oxygen, the obtained thermal conductivity is substantially higher, compared to that of the conventional gas-pressure sintered silicon nitride, while the microstructures and bending strengths are similar to each other between these two samples. Moreover, further improvement of the thermal conductivity is possible by increasing ${\beta}/{\alpha}$ phase ratio of the nitrided sample, resulting in a very high thermal conductivity of 177 W/($m{\cdot}K$) as well as a high fracture toughness of 11.2 $MPa{\cdot}m^{1/2}$.
High Thermal Conductivity Silicon Nitride Ceramics
Kiyoshi Hirao,You Zhou,Hideki Hyuga,Tatsuki Ohji,Dai Kusano 한국세라믹학회 2012 한국세라믹학회지 Vol.49 No.4
This paper deals with the recent developments of high thermal conductivity silicon nitride ceramics. First, the factors that reduce the thermal conductivity of silicon nitride are clarified and the potential approaches to realize high thermal conductivity are described. Then, the recent achievements on the silicon nitride fabricated through the reaction bonding and post sintering technique are presented. Because of a smaller amount of impurity oxygen, the obtained thermal conductivity is substantially higher, compared to that of the conventional gas-pressure sintered silicon nitride, while the microstructures and bending strengths are similar to each other between these two samples. Moreover, further improvement of the thermal conductivity is possible by increasing β/α phase ratio of the nitrided sample, resulting in a very high thermal conductivity of 177 W/(m·K) as well as a high fracture toughness of 11.2 MPa· m1/2.
Luminescent Properties of Europium-Doped Lanthanum Silicon Nitride Phosphor
Lences, Zoltan,Hrabalova, Monika,Czimerova, Adriana,Sajgalik, Pavol,Zhou, You,Hirao, Kiyoshi The Korean Ceramic Society 2012 한국세라믹학회지 Vol.49 No.4
Europium-doped $LaSi_3N_5$ phosphor was synthesized from LaSi/Si/$Si_3N_4/Eu_2O_3$ mixture by nitridation at $1390^{\circ}C$ and additional annealing at $1650^{\circ}C$ for 4 h. The phosphor shows emissions in the green light region with a maximum at 560 nm. With increasing europium content in the general formula $La_{1-z}Eu_zSi_3N_{5-z}O_{1.5z}$ from z = 0.01 to 0.06 there was a maximum emission for z = 0.04 followed by concentration quenching for the highest europium content (z = 0.06).
Luminescent Properties of Europium-Doped Lanthanum Silicon Nitride Phosphor
Zoltán Lencéš,Monika Hrabalová,Adriana Czímerová,Pavol Šajgalík,You Zhou,Kiyoshi Hirao 한국세라믹학회 2012 한국세라믹학회지 Vol.49 No.4
Europium-doped LaSi3N5 phosphor was synthesized from LaSi/Si/Si3N4/Eu2O3 mixture by nitridation at 1390oC and additional annealing at 1650oC for 4 h. The phosphor shows emissions in the green light region with a maximum at 560 nm. With increasing europium content in the general formula La1-zEuzSi3N5-zO1.5z from z = 0.01 to 0.06 there was a maximum emission for z = 0.04 followed by concentration quenching for the highest europium content (z = 0.06).