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- 저자 : Kazuhito Nakagawa (검색결과 1 건)
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Light induced recombination center at SiO2/Si interface by the reactive plasma deposition
Tomohiko Hara,Taichi Tanaka,Kazuhito Nakagawa,Yuki Isogai,Takefumi Kamioka,Yoshio Ohshita 대한금속·재료학회 2021 ELECTRONIC MATERIALS LETTERS Vol.17 No.5
Effect of lights with various wavelength on the defect generation in reactive plasma deposition (RPD) process is studiedusing capacitance–voltage analysis. Indium-tin oxide (ITO) deposition by RPD dramatically decreases the minority carrierlifetime and deteriorates the solar cell performances. The wavelength of light which arrives at the SiO2/Si interface andSi crystal is controlled by varying the SiO2thickness in SiO2/Si samples. Thick SiO2layer with above 10 nm prevents thepenetration of many ions into the SiO2/Si interface layer, and the only effects of light wavelength on the defect formation areobtained. When SiO2thickness are 10–600 nm, a large number of defects of the order of 1012eV−1 cm−2, mid gap energyof Si, are generated by ITO-RPD independent of SiO2thickness. These defects are expected to be recombination centers. These SiO2thicknesses are enough thick to completely absorb the light below-110-nm-wavelength. The results suggest thatthe light of longer wavelength than 110 nm mainly contributes to the defect formation in RPD process. On the other hand,in the case of 500 μm thick SiO2,the generated defects are significantly decreased by one order of magnitude (or decreasedto the order of 1010eV−1 cm−2) small amount of defect is generated. This thick SiO2prevents the penetration of light withbelow 180 nm wavelength into the Si. Therefore, the light with around 110–180 nm wavelength, which are generated by Arand/or O2plasma in RPD process, mainly forms the recombination-active defects.
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