http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
송치운,구본정,안봉수,전준식,안미애,이진홍,송민호,김영건,노흥규 충남대학교 의과대학 지역사회의학연구소 1995 충남의대잡지 Vol.22 No.2
Addison's disease is a rare primary adrenal insufficient disorder resulting from chronic deficiency of adrenal cortical hormones. Clinical manefestations are generalized weakenss, weight loss, hyperpigmentation (especially sun exposed area and mucous membrane), hypotension, hyponatremia, hyperkalemia, gastrointestinal symptoms (involving anorexia, nausea, vomiting, abdominal pain). A 34-year-old woman has experienced slowly progressive generalized weakenss and skin pigmentation, anorexia, nausea, vomiting with ascites and diffuse abdominal pain. On the time of admission, her main clinical manifestations were anorexia, nausea, vomiting, fatigue, generalized weakness, amenorrhea, hair loss, diffuse abdominal pain revealed as Addison's disease due to bilateral adrenal tuberculosis. Her adrenal insufficient symptoms were recovered with the replacement of adrenocortical hormones and antituberculous medications. After treatment, Her skin pigmentation was decreased and menstruation was reappeared. Here we experienced one cases of Addison's disease with tuberculous peritonitis.
Ahn, Jun-Ku,Park, Kyoung-Woo,Jung, Hyun-June,Yoon, Soon-Gil American Chemical Society 2010 NANO LETTERS Vol.10 No.2
<P>Phase-change InSbTe (IST) single crystalline nanowires were successfully synthesized at a low temperature of 250 °C by metalorganic chemical vapor deposition (MOCVD). The growth of IST nanowires by MOCVD, at very high working pressure, was governed by supersaturation. The growth mechanism of the IST nanowires by MOCVD is addressed in this paper. Under high working pressure, the InTe phase was preferentially formed on the TiAlN electrode, and the InTe protrusions were nucleated on the InTe films under high supersaturation. The Sb was continuously incorporated into the InTe protrusions, which was grown as an IST nanowire. Phase-change-induced memory switching was realized in IST nanowires with a threshold voltage of about 1.6 V. The ability to grow IST nanowires at low temperature by MOCVD should open opportunities for investigation of the nanoscale phase-transition phenomena.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/nalefd/2010/nalefd.2010.10.issue-2/nl903188z/production/images/medium/nl-2009-03188z_0006.gif'></P>
Ahn, Jun-Ku,Park, Kyoung-Woo,Hur, Sung-Gi,Kim, Chung-Soo,Lee, Jeong-Yong,Yoon, Soon-Gil American Scientific Publishers 2011 Journal of nanoscience and nanotechnology Vol.11 No.1
<P>The feasibility of new InSbTe (IST) chalcogenide materials at the deposition temperatures of 225 and 250 degrees C using metalorganic chemical vapor deposition (MOCVD) for phase-change random access memory (PRAM) applications was investigated. Samples grown at 225 degrees C consisted of the main InTe phase, including a small amount of Sb. On the other hand, samples grown at 250 degrees C included the crystalline phases of InSb and InSbTe. MOCVD-IST materials are powerful candidates for highly-integrated PRAM applications.</P>
Ahn, Jun-Ku,Kim, Hae-Won,Ahn, Kyung-Chan,Yoon, Soon-Gil,Son, Seung-Hyun,Jung, Hyung-Mi,Moon, Jin-Suck,Jin, Hyun-Joo,Lee, Seung-Eun,Lee, Jeong-Won,Chung, Yeoul-Kyo,Oh, Yong-Soo Taylor Francis 2007 Integrated ferroelectrics Vol.95 No.1
<P> B2Mg2/3Nb4/3O7 (BMN) thin films were deposited at low temperature (< 200°C) on Copper Clad Laminates (CCL) with various Ar/O2 flow ratios and film thicknesses by sputtering system. 200 nm-thick BMN thin films were deposited at Ar/O2 = 10: 10 had rms roughness of 54.3 ÅA, capacitance density of 155 nF/cm2 at 100 kHz, dissipation factor of 0.017 and leakage current density of ∼10- 5 at 3 V. Surface roughness of the BMN thin films increased a little with increasing the film thickness. However leakage current density decreased and the dielectric constant of that was maintained at 40.</P>
Ahn, Jun-Ku,Park, Kyoung-Woo,Hur, Sung-Gi,Seong, Nak-Jin,Kim, Chung-Soo,Lee, Jeong-Yong,Yoon, Soon-Gil Royal Society of Chemistry 2010 Journal of materials chemistry Vol.20 No.9
<P>The feasibility of InSbTe (IST) chalcogenide new materials by metalorganic chemical vapor deposition (MOCVD) was demonstrated for PRAM applications. IST-MOCVD at a low temperature of 250 °C resulted in a favorable conformal deposition in the trench structure with a high aspect ratio. The IST films grown at 250 °C showed the highest resistance of approximately 10<SUP>8</SUP> Ω/sq, suggesting the amorphous phase of IST and the films grown at 300 °C include various crystalline phases of IST, In–Sb, and In–Te. MOCVD-IST films exhibited a step-coverage of about 95% in the trench structure with a 5 : 1 aspect ratio (a height of 500 nm and a diameter of 100 nm) and also showed reliable filling of the trench under appropriate deposition conditions. Phase switching between amorphous and crystalline states in the IST films grown on a trench structure at a high-aspect ratio (3.5 : 1) was demonstrated showing functional characteristics for applications in memory devices. The IST-based chalcogenide films used included various crystallized phases of In–Sb–Te, In–Sb and In–Te, which proved to be favorable for multilevel data storage.</P> <P>Graphic Abstract</P><P>The IST films, with completely filled trench structures at 250 °C by metalorganic chemical vapor deposition, showed a good switching behavior and the steps exhibiting the abrupt resistance changes at two different voltages indicate a possibility of the multi-level data storage in IST-PRAM devices. <IMG SRC='http://pubs.rsc.org/services/images/RSCpubs.ePlatform.Service.FreeContent.ImageService.svc/ImageService/image/GA?id=b922398c'> </P>
Ahn, Kyeong-Chan,Park, Jong-Hyun,Ahn, Jun-Ku,Yoon, Soon-Gil The Korean Institute of Electrical and Electronic 2007 Transactions on Electrical and Electronic Material Vol.8 No.2
[ $Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7$ ] (BZN), $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMN), and $Bi_2Cu_{2/3}Nb_{4/3}O_7$ (BCN) pyrochlore thin films were prepared on $Cu/Ti/SiO_2/Si$ substrates by pulsed laser deposition and the micro-structural and electrical properties were characterized for embedded capacitor applications. The BZN, BMN, and BCN films deposited at $25\;^{\circ}C$ and $150\;^{\circ}C$, respectively show smooth surface morphologies and dielectric constants of about $39\;{\sim}\;58$. The high dielectric loss of the films deposited at $150\;^{\circ}C$ compared with films deposited at $25\;^{\circ}C$ was attributed to the defects existing at interface between the films and copper electrode by an oxidation of copper bottom electrode. The leakage current densities and breakdown voltages in 200 nm thick-BMN and BZN films deposited at $150\;^{\circ}C$ are approximately $2.5\;{\times}\;10^{-8}\;A/cm^2$ at 3 V and above 10 V, respectively. Both BZN and BMN films are considered to be suitable materials for embedded capacitor applications.
Sol-gel Material Optimization for Aptamer Biosensors
Ahn, Ji-Young,Cho, Min-Jung,Lee, Se-Ram,Park, Jun-Tae,Hong, Seok-Jin,Shin, Sung-Ho,Jeong, Min-Ku,Lee, Dong-Ki,Kim, So-Youn The Korean Society of Toxicogenomics and Toxicopro 2008 Molecular & cellular toxicology Vol.4 No.2
Biochips are a powerful emerging technology for biomedical, environmental applications. Especially, making use of bioseonors in the evaluation of toxicity becomes increasingly important. For biosensor as a toxicity detection, biomolecules like antibodies or aptamers have been developed to specifically capture the toxic target molecules. In addition, the development of optimal chip materials capable of maintaining the activity of embedded biomolecules such as proteins or aptamers has proven challenging. Here, using sol-gel materials, new chip material, whose ability for immobilizing the embedded aptamers and maintaining the ability of embedded aptamers is optimal, was searched. We used sol-gel formulation screening methods previously developed and found the best formulation which shows high sensitive and specific interactions of aptamers. This study results will support the technological advancement for diagnosis and environmental sensor.