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HALL EFFECT AND RESISTIVITY OF AMORPHOUS Fe83-XZr7B10NbX ALLOYS
Soo-Hyung Lee,Seong-Cho Yu,Jun-Hau Xu,K. V. Rao,Tae-Hwan Noh. Il-Koo Kang,Kungwon Rhie 한국자기학회 1995 韓國磁氣學會誌 Vol.5 No.5
The effect of small addition of Nb on the electrical resistivity and Hall coefficient of the amorphous Fe_(83)Zr_7B_(10) alloy and annealed ones below the crystallization temperature were investigated, which has been considered to be suitable for high frequency core material. At room temperature, their resistivities ρ and the spontaneous Hall coefficients Rs are ~1.6 μΩm and ~ 3 × 10^(-8) ㎥/As, respectively. Rs and ρ are decreased with increasing temperature from 100 K to room temperature. Side-jump effect was adopted to analyze the effect of the small variation of concentration and annealing. The quantity of Rs/ρ² at room temperature, which is directly related to the electronic structure of the mother alloy, remained almost a constant except as Quenched one as it can be predicted from the side-jump effect. We suggested the temperature dependence of Rs/ρ² can be compared to Ms(T).