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RISS 인기검색어
- 검색키워드
- 저자 : Ismach, Ariel (검색결과 2 건)
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Mesoscale Imperfections in MoS<sub>2</sub> Atomic Layers Grown by a Vapor Transport Technique
Liu, Yingnan,Ghosh, Rudresh,Wu, Di,Ismach, Ariel,Ruoff, Rodney,Lai, Keji American Chemical Society 2014 NANO LETTERS Vol.14 No.8
<P>The success of isolating small flakes of atomically thin layers through mechanical exfoliation has triggered enormous research interest in graphene and other two-dimensional materials. For device applications, however, controlled large-area synthesis of highly crystalline monolayers with a low density of electronically active defects is imperative. Here, we demonstrate the electrical imaging of dendritic ad-layers and grain boundaries in monolayer molybdenum disulfide (MoS<SUB>2</SUB>) grown by a vapor transport technique using microwave impedance microscopy. The micrometer-sized precipitates in our films, which appear as a second layer of MoS<SUB>2</SUB> in conventional height and optical measurements, show ∼2 orders of magnitude higher conductivity than that of the single layer. The zigzag grain boundaries, on the other hand, are shown to be more resistive than the crystalline grains, consistent with previous studies. Our ability to map the local electrical properties in a rapid and nondestructive manner is highly desirable for optimizing the growth process of large-scale MoS<SUB>2</SUB> atomic layers.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/nalefd/2014/nalefd.2014.14.issue-8/nl501782e/production/images/medium/nl-2014-01782e_0006.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nl501782e'>ACS Electronic Supporting Info</A></P>
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Liang, Xiaogan,Jung, Yeon-Sik,Wu, Shiwei,Ismach, Ariel,Olynick, Deirdre L.,Cabrini, Stefano,Bokor, Jeffrey American Chemical Society 2010 NANO LETTERS Vol.10 No.7
<P>We fabricated hexagonal graphene nanomeshes (GNMs) with sub-10 nm ribbon width. The fabrication combines nanoimprint lithography, block-copolymer self-assembly for high-resolution nanoimprint template patterning, and electrostatic printing of graphene. Graphene field-effect transistors (GFETs) made from GNMs exhibit very different electronic characteristics in comparison with unpatterned GFETs even at room temperature. We observed multiplateaus in the drain current−gate voltage dependence as well as an enhancement of ON/OFF current ratio with reduction of the average ribbon width of GNMs. These effects are attributed to the formation of electronic subbands and a bandgap in GNMs. Such mesoscopic graphene structures and the nanofabrication methods could be employed to construct future electronic devices based on graphene superlattices.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/nalefd/2010/nalefd.2010.10.issue-7/nl100750v/production/images/medium/nl-2010-00750v_0005.gif'></P>
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