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THE ADVANTAGE OF LOW GROWTH TEMPERATURE AND V/III RATIO FOR In_xGa_(1-x)As NANOWIRES GROWTH
EDY WIBOWO,ZULKAFLI OTHAMAN,SAMSUDI SAKRANI,IMAM SUMPONO 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2011 NANO Vol.6 No.2
Cylindrical In_xGa_(1-x)As nanowires (NWs) perpendicular to the substrate have been successfully grown using MOCVD. Morphology of In_xGa_(1-x)As NWs has been observed using Field Emission-Scanning Electron Microscopy (FE-SEM) and Transmission Electron Microscopy (TEM). Both FE-SEM and TEM results show that the NWs grown at low growth temperature and V/III ratio were via direct impinging mechanism. Energy Dispersive X-ray spectroscopy (EDX) results confirm that the cylindrical NWs grown via direct impinging mechanism and tends to have uniform chemical composition.