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RISS 인기검색어
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- 저자 : Hermansson, Kersti (검색결과 2 건)
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A Review of Nanostructured Ca-aluminate Based Biomaterials within Odontology and Orthopedics
Hermansson, Leif The Korean Ceramic Society 2018 한국세라믹학회지 Vol.55 No.2
This presentation will give an overview of Ca-aluminate based biomaterials and their proposed use within the field of nanostructured biomaterials. The paper describes typical features of Ca-aluminate materials with regard to technology, chemistry, biocompatibility including hemocompatibility and bioactivity, and developed microstructure. Special focus will be on the developed microstructure, which is in the nanosize range. Application possibilities within odontology, orthopedics, and drug delivery are presented. The nanostructure including pore size below 5 nm in these structures opens up this material for some use in specific dental-related applications in which antibacterial and bacteriostatic aspects are of importance, and as thin coating on implants within dental and orthopaedic applications. Nanosize porosity is essential in drug delivery systems for controlled release of medicaments. The priority field for Ca-aluminate biomaterials is implant materials, which use minimally-invasive techniques to offer in vivo, on-site developed biomaterials.
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Indirect-to-Direct Band Gap Transition of Si Nanosheets: Effect of Biaxial Strain
Kim, Byung-Hyun,Park, Mina,Kim, Gyubong,Hermansson, Kersti,Broqvist, Peter,Choi, Heon-Jin,Lee, Kwang-Ryeol American Chemical Society 2018 The Journal of Physical Chemistry Part C Vol.122 No.27
<P>The effect of biaxial strain on the band structure of two-dimensional silicon nanosheets (Si NSs) with (111), (110), and (001) exposed surfaces was investigated by means of density functional theory calculations. For all the considered Si NSs, an indirect-to-direct band gap transition occurs as the lateral dimensions of Si NSs increase; that is, increasing lateral biaxial strain from compressive to tensile always enhances the direct band gap characteristics. Further analysis revealed the mechanism of the transition which is caused by preferential shifts of the conduction band edge at a specific <I>k</I>-point because of their bond characteristics. Our results explain a photoluminescence result of the (111) Si NSs [U. Kim et al., <I>ACS Nano</I><B>2011</B>, <I>5</I>, 2176-2181] in terms of the plausible tensile strain imposed in the unoxidized inner layer by surface oxidation.</P> [FIG OMISSION]</BR>
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