RISS 검색 - 국내학술지논문

무료
기관 내 무료
유료

내보내기
내책장담기
한글로보기

정확도순

내림차순

내림차순

10개씩 출력

1
(Semi)ladder-Type Bithiophene Imide-Based All-Acceptor Semiconductors: Synthesis, Structure-Property Correlations, and Unipolar n-Type Transistor Performance

Wang, Yingfeng,Guo, Han,Harbuzaru, Alexandra,Uddin, Mohammad Afsar,Arrechea-Marcos, Iratxe,Ling, Shaohua,Yu, Jianwei,Tang, Yumin,Sun, Huiliang,Ló,pez Navarrete, Juan Teodomiro,Ortiz, Rocio Ponce American Chemical Society 2018 JOURNAL OF THE AMERICAN CHEMICAL SOCIETY - Vol.140 No.19
- 원문보기
Development of high-performance unipolar n-type organic semiconductors still remains as a great challenge. In this work, all-acceptor bithiophene imide-based ladder-type small molecules BTIn and semiladder-type homopolymers PBTIn (n = 1-5) were synthesized, and their structure-property correlations were studied in depth. It was found that Pd-catalyzed Stille coupling is superior to Ni-mediated Yamamoto coupling to produce polymers with higher molecular weight and improved polymer quality, thus leading to greatly increased electron mobility (μe). Due to their all-acceptor backbone, these polymers all exhibit unipolar n-type transport in organic thin-film transistors, accompanied by low off-currents (10-10-10-9 A), large on/off current ratios (106), and small threshold voltages (∼15-25 V). The highest μe, up to 3.71 cm2 V-1 s-1, is attained from PBTI1 with the shortest monomer unit. As the monomer size is extended, the μe drops by 2 orders to 0.014 cm2 V-1 s-1 for PBTI5. This monotonic decrease of μe was also observed in their homologous BTIn small molecules. This trend of mobility decrease is in good agreement with the evolvement of disordered phases within the film, as revealed by Raman spectroscopy and X-ray diffraction measurements. The extension of the ladder-type building blocks appears to have a large impact on the motion freedom of the building blocks and the polymer chains during film formation, thus negatively affecting film morphology and charge carrier mobility. The result indicates that synthesizing building blocks with more extended ladder-type backbone does not necessarily lead to improved mobilities. This study marks a significant advance in the performance of all-acceptor-type polymers as unipolar electron transporting materials and provides useful guidelines for further development of (semi)ladder-type molecular and polymeric semiconductors for applications in organic electronics. [FIG OMISSION]
2
High Electron Mobility in [1]Benzothieno[3,2-b][1]benzothiophene-Based Field-Effect Transistors: Toward n-Type BTBTs

Usta, Hakan,Kim, Dojeon,Ozdemir, Resul,Zorlu, Yunus,Kim, Sanghyo,Ruiz Delgado, M. Carmen,Harbuzaru, Alexandra,Kim, Seonhyoung,Demirel, Gö,khan,Hong, Jongin,Ha, Young-Geun,Cho, Kilwon,Facchetti, American Chemical Society 2019 Chemistry of materials Vol.31 No.14
- 원문보기
The first example of an n-type [1]benzothieno[3,2-b][1]benzothiophene (BTBT)-based semiconductor, D(PhFCO)-BTBT, has been realized via a two-step transition-metal-free process without using chromatographic purification. Physicochemical and optoelectronic characterizations of the new semiconductor were performed in detail, and the crystal structure was accessed. The new molecule exhibits a large optical band gap (∼2.9 eV) and highly stabilized (ΔELUMO = 1.54 eV)/π-delocalized lowest unoccupied molecular orbital (LUMO) mainly comprising the BTBT π-core and in-plane carbonyl units. The effect of out-of-plane twisted (64°) pentafluorophenyl groups on LUMO stabilization is found to be minimal. Polycrystalline D(PhFCO)-BTBT thin films prepared by physical vapor deposition exhibited large grains (∼2-5 μm sizes) and “layer-by-layer” stacked edge-on oriented molecules with an in-plane herringbone packing (intermolecular distances ∼3.25-3.46 Å) to favor two-dimensional (2D) source-to-drain (S → D) charge transport. The corresponding TC/BG-OFET devices demonstrated high electron mobilities of up to ∼0.6 cm2/V·s and Ion/Ioff ratios over 107−108. These results demonstrate that the large band gap BTBT π-core is a promising candidate for high-mobility n-type organic semiconductors and, combination of very large intrinsic charge transport capabilities and optical transparency, may open a new perspective for next-generation unconventional (opto)electronics. [FIG OMISSION]

내보내기
내책장담기
한글로보기

정확도순

내림차순

내림차순

10개씩 출력

맨처음 페이지로 1 맨끝 페이지로

상세검색

RISS 보유자료

상세검색

해외전자자료

연관 검색어 추천