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Characteristics of multilevel bipolar resistive switching in Au/ZnO/ITO devices on glass
Han, Yong,Cho, Kyoungah,Kim, Sangsig Elsevier 2011 MICROELECTRONIC ENGINEERING Vol.88 No.8
<P><B>Abstract</B></P> <P>In this study, we characterize multilevel bipolar switching in devices composed of Au/ZnO/ITO constructed on glass. The ratio of the measured resistance in the low-resistance state (LRS) to that in the high-resistance state (HRS) depends on the starting sweep voltage. The HRS/LRS ratio increases from 10 to 10<SUP>4</SUP> as the starting sweep voltage changes from −1 to −3.5V. Moreover, the Au/ZnO/ITO devices can complete more than 10<SUP>2</SUP> cycles and maintain their characteristics for up to 10years. A more detailed description on the multilevel bipolar switching of our devices will be given in this paper.</P>
Introduction and application of a composite insect trap for the National Ecosystem Survey of Korea
Han Yong‐Gu,Hong Eui jeong,Kim Do‐Sung,Kim Chulgoo,Cha Jin Yeol 한국곤충학회 2020 Entomological Research Vol.50 No.10
This study aimed to establish the best applicable method for the National Ecosystem Survey (NES) guidelines by (i) verifying the efficiency of an insect trap that combined the Malaise trap, flight intercept trap, and pitfall trap (MFP trap) as part of the improvement for the terrestrial insect field in the fifth NES, and (ii) comparing the result with the currently used Malaise trap and pitfall trap (MP traps). We found that the efficiency of attaining species diversity was much higher with the added flight intercept trap function than the current Malaise trap alone for flying insect collection. For collecting ground insects, the efficiency of attaining species diversity of the pitfall trap from the MFP trap was lower than that from the MP trap. Besides, the Malaise trap of the MP trap showed superior efficiency than that of the MFP trap in species diversity. The results suggested that modification, supplementation, and re‐testing should be performed by analyzing various factors such as the trap material, barrier size, capturing container inlet, and mesh size, with consideration of the design of the current Malaise trap. Therefore, in survey‐based research, which aims at identifying insects species diversity and inhabiting status—such as the NES, it is necessary to introduce the MFP trap with the flight intercept trap function added to the Malaise trap function, and for the pitfall trap function of the MFP trap, it can be operated as a separate trap from the MFP trap.
Han, Yong,Chung, Isaac,Park, Sukhyung,Cho, Kyoungah,Kim, Sangsig American Scientific Publishers 2013 Journal of Nanoscience and Nanotechnology Vol.13 No.9
<P>In this study, we investigate the effect of top electrode (TE) materials on the resistive switching characteristics of TE/ZnOxS1-x:Mn/Al devices. Al, Cu, Au, Ni, and ITO are used as the TE materials of our devices. Except for the ITO TE devices, all the devices show unipolar resistive switching and maintain memory characteristics even after 10(4) s. The ratios of high resistance state (HRS) and low resistance state (LRS) for the Al, Cu, Au, and Ni TE devices are 10(5), 10(5), 10(4), and 10(2), respectively. The low ratio of HRS and LRS of the Ni TE device is attributed to a high magnitude of current at HRS. The Cu/ZnOxS1-x:Mn/Al device shows the smallest distribution of set voltages. The ITO TE device exhibits bipolar resistive switching and suffers change in the resistance at HRS after 10(3) s. Considering the distribution of set voltages and the ratio of HRS and LRS, Cu is the most suitable TE material for the TE/ZnOxS1-x:Mn/Al devices.</P>
Han, Yong,Cho, Kyoungah,Park, Sukhyung,Kim, Sangsig The Korean Institute of Electrical and Electronic 2014 Transactions on Electrical and Electronic Material Vol.15 No.1
In this study, the effects of Mn-doping and the electrode materials on the memory characteristics of $ZnO_xS_{1-x}$ resistive random access memory (ReRAM) devices on plastic are investigated. Compared with the undoped Al/$ZnO_xS_{1-x}$/Au and Al/$ZnO_xS_{1-x}$/Cu devices, the Mn-doped ones show a relatively higher ratio of the high resistance state (HRS) to low resistance state (LRS), and narrower resistance distributions in both states. For the $ZnO_xS_{1-x}$ devices with bottom electrodes of Cu, more stable conducting filament paths are formed near these electrodes, due to the relatively higher affinity of copper to sulfur, compared with the devices with bottom electrodes of Au, so that the distributions of the set and reset voltages get narrower. For the Al/$ZnO_xS_{1-x}$/Cu device, the ratio of the HRS to LRS is above $10^6$, and the memory characteristics are maintained for $10^4$ sec, which values are comparable to those of ReRAM devices on Si or glass substrates.
Han, Yong,Cho, Kyoungah,Kim, Sangsig American Scientific Publishers 2012 Journal of Nanoscience and Nanotechnology Vol.12 No.7
<P>In this study, Cu/ZnO0.4S0.6Al devices are fabricated on plastic substrates using the sputtering method at room temperature. The ratio of O/S in the zinc oxysulfide thin film is confirmed to be 0.4/0.6 from the Auger depth profiling. The Cu/ZnO0.4S0.6/Al devices show unipolar resistive switching behaviors and the ratio of the measured resistance in the low-resistance state (LRS) to that in the high-resistance state (HRS) is above 10(4). The conduction mechanism of the LRS is governed by Ohm's law. On the other hand, in the HRS, the conduction mechanism at low voltages is controlled by Ohm's law, but that at high voltages results from the Poole-Frenkel emission mechanism. The Ohmic and Poole-Frenkel conduction mechanisms observed in the LRS and HRS support the filament model of unipolar resistive switching. The memory characteristics of the Cu/ZnO0.4S0.6/Al devices are retained for 10(4) sec without any change.</P>
Magnetic Field Gradient Optimization for Electronic Anti-Fouling Effect in Heat Exchanger
Han, Yong,Wang, Shu-Tao The Korean Institute of Electrical Engineers 2014 Journal of Electrical Engineering & Technology Vol.9 No.6
A new method for optimizing the magnetic field gradient in the exciting coil of electronic anti-fouling (EAF) system is presented based on changing exciting coil size. In the proposed method, two optimization expressions are deduced based on biot-savart law. The optimization expressions, which can describe the distribution of the magnetic field gradient in the coil, are the function of coil radius and coil length. These optimization expressions can be used to obtain an accurate coil size if the magnetic field gradient on a certain point on the coil's axis of symmetry is needed to be the maximum value. Comparing with the experimental results and the computation results using Finite Element Method simulation to the magnetic field gradient on the coil's axis of symmetry, the computation results obtained by the optimization expression in this article can fit the experimental results and the Finite Element Method results very well. This new method can optimize the EAF system's anti-fouling performance based on improving the magnetic field gradient distribution in the exciting coil.
Han, Yong‐,Hyeon,Travas‐,Sejdic, Jadranka,Wright, Bryon,Yim, Jin‐,Heong WILEY‐VCH Verlag 2011 Macromolecular chemistry and physics Vol.212 No.5
<P><B>Abstract</B></P><P>The co‐vaporization and simultaneous polymerization of EDOT and APTES on a FTS‐coated substrate resulting in a homogeneous PEDOT/ASSQ thin film is described. The physicochemical properties of the film, including surface hardness, solvent mechanical wear resistance, and resistance to scratch, were much better than those of pure PEDOT. A PEDOT/ASSQ hybrid film with homogeneous morphology resulted, as judged by AFM topography scans, surface roughness calculations, and SEM images. The ASSQ proportion in the hybrid films, as investigated by XPS and EDS, was strongly dependent on the content of FTS on the substrate. In addition, the simultaneous polymerization of a PEDOT/ASSQ hybrid film onto selective micropatterns was demonstrated and analyzed.</P>