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RISS 인기검색어
- 검색키워드
- 저자 : Golberg, Dmitri (검색결과 2 건)
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Shen, G. Z.,Bando, Y.,Liu, B. D.,Golberg, D.,Lee, C.-J. WILEY-VCH Verlag 2006 Advanced functional materials Vol.16 No.3
<P>Vertically aligned ZnO nanonails and nanopencils are synthesized on a silicon substrate using a modified thermal-evaporation process, without using a catalyst or predeposited buffer layers. An adiabatic layer is used to provide an abrupt temperature decrease and high gas concentration for the nanostructures growth. The structure and morphology of the as-synthesized ZnO nanonails and nanopencils are characterized using X-ray diffraction, and scanning and transmission electron microscopies. Raman and photoluminescence properties are also investigated at room temperature. Field-emission characterization shows that the turn-on fields for the vertically aligned ZnO nanonails and nanopencils are 7.9 and 7.2 V &mgr;m<SUP>–1</SUP>, respectively.</P> <B>Graphic Abstract</B> <P>Vertically aligned ZnO nanonails and nanopencils (see Figure) are synthesized on a silicon substrate using a modified thermal-evaporation process, without a catalyst or predeposited buffer layer. An adiabatic layer is used to provide an abrupt temperature decrease and high gas concentration for the nanostructures' growth. <img src='wiley_img/1616301X-2006-16-3-ADFM200500571-content.gif' alt='wiley_img/1616301X-2006-16-3-ADFM200500571-content'> </P>
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Crystal facet engineering induced anisotropic transport of charge carriers in a perovskite
Yang, Hewei,Zhou, Yunzhan,Yang, Yijun,Yi, Ding,Ye, Tao,Lam, Tran Dai,Golberg, Dmitri,Bao, Bate,Yao, Jiannian,Wang, Xi The Royal Society of Chemistry 2018 Journal of Materials Chemistry C Vol.6 No.43
<P>Precise control of crystal orientations and macroscopic morphology of a perovskite crystal is crucial for various optoelectronic applications relying on charge carrier transport tuning along exposed crystal facets. Here, taking methylammonium lead bromide (CH3NH3PbBr3) as an example, and employing a novel crystal facet engineering method, we successfully construct two kinds of perovskite crystals with exposed {001} and {110} facets. We find that the free carriers’ photoluminescence lifetime on the {001} facets can be 3 times longer than that on {110} facets. The related mechanisms are investigated <I>via</I> fluorescence lifetime imaging microscopy and <I>in situ</I> transmission electron microscopy. These indicate that the different trap state density of exposed facets and crystal structure changing of CH3NH3PbBr3 under light and electron beam irradiation lead to the differences in carrier transport along different facets. By distinguishing the charge carrier transport on different CH3NH3PbBr3 exposed facets, micro-photodetectors have been constructed. A device fabricated with the {001} exposed facets exhibited two orders of magnitude higher photocurrent and half as much dark current as a {110} facet-based device. Thus, the crystal facet engineering of perovskites can be widely adopted for understanding physical/chemical properties of perovskite crystals and provides great potential for novel perovskite optoelectronic device applications.</P>
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